Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:42:01.460Z Has data issue: false hasContentIssue false
  • English
  • Français

Some new Results on Strontium Bismuth Tantalate Thin-Film Ferroelectric Memory Materials

Published online by Cambridge University Press:  10 February 2011

J. F. Scott ,
A. J. Hartmann ,
R. N. Lamb ,
F. M. Ross ,
A. DE Vilbis ,
C. A. Paz De Araujo ,
M. C. Scott  and
G. Derbenwick
J. F. Scott
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
A. J. Hartmann
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
R. N. Lamb
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
F. M. Ross
Affiliation:
Lawrence Berkeley Lab., University of California, Berkeley, CA, [email protected]
A. DE Vilbis
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
C. A. Paz De Araujo
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
M. C. Scott
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
G. Derbenwick
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
Get access

Abstract

review is given, emphasizing electron microscopy, XPS, heavy-ion scattering, and very high frequency (1 MHz) hysteresis data, of the materials characteristics of thin films of SrBi2NbTaO9, SrBi2Ta2O9, and related titanates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 77
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Srolovitz, D. J. and Scott, J. F., Phys. Rev. B 34, 1815 (1986).Google Scholar
2. Stannard, W. B. et al., ISIF, Tempe, AZ (March 18, 1996), Integ. Ferroelec. (in press).Google Scholar
3. Gutleben, C. D., MRS Conf., San Francisco, 7 April 1996 (in press).Google Scholar
4. Stannard, W. B. et al., Proc. EMIF-1, Nijmegen, 4 July 1995 (Elsevier, Amsterdam, 1995, edited by Larsen, P. K. and Dormans, G. J. M., p. 193.Google Scholar
5. Hartmann, A. J., Lamb, R., and Scott, J. F., Proc. “Urgent International Forum on Ferroelectric Thin-Film Memory Ics” (Tokyo, 24 May 1996), published by Science Forum, Inc., Tokyo, edited by Hirotaka Motoyama.Google Scholar
6. DeVilbis, A. et al., ISIF, Tempe, AZ (March 18, 1996), Integ. Ferroelec. (in press).Google Scholar
7. Ishibasi, Y. and Orihara, H., Integ. Ferroelec. 9, 57 (1995).Google Scholar