Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T21:18:27.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Solution Growth and Characterization of Icosahedral Boron Arsenide (B12As2)

Published online by Cambridge University Press:  14 March 2011

C.E. Whiteley ,
Y. Zhang ,
A. Mayo ,
J.H. Edgar ,
Y. Gong ,
M. Kuball  and
M. Dudley
C.E. Whiteley
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
Y. Zhang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY 11794, USA
A. Mayo
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
Y. Gong
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY 11794, USA
Get access

Abstract

The crystallographic properties of bulk icosahedral boron arsenide (B12As2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the boron in nickel at 1150°C for 48-72 hours, reacting with arsenic vapor, and slowly cooling to room temperature. The crystals varied in color from black and opaque to clear and transparent. Raman spectroscopy, x-ray topography (XRT), and defect selective etching revealed that the B12As2 single crystals were high quality with low dislocation densities. Furthermore, XRT results suggest that the major face of the plate-like crystals was (111) type, while (100), (010) and (001) type facets were also observed optically. The predominant defect in these crystals was edge character growth dislocations with a <001> Burgers vector, and <-110> line direction. In short, XRT characterization shows that solution growth is a viable method for producing good quality B12As2 crystals.

Keywords

Bcrystallographic structureflux growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc02-04
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Emin, D. and Aselage, T. L., J. Appl. Phys. 97, 013529 (2005)Google Scholar
[2] Dresselhaus, M., Chen, G., Tang, M. Y., Yang, R., Lee, H., Yang, D., Ren, Z., Fleurial, J., and Gogna, P., Int. Mater. Rev., 48, 45 (2005)Google Scholar
[3] Emin, D., Physics Today, January, 55 (1987)Google Scholar
[4] Slack, G. A., Oliver, D. W. and Horn, F. H., Phys. Rev. B, 4, 1714, (1971)Google Scholar
[5] Ownby, P. D., Journal of the American Ceramic Society, 58, 7–8, 359 (1975)Google Scholar
[6] Emin, D., J. Sol. Sta. Chem., 179, 2791 (2006)Google Scholar
[7] Emin, D., J. Sol. Sta. Chem., 177, 1619 (2004)Google Scholar
[8] Carrard, M., Emin, D. and Zuppiroli, L., Phys. Rev. B, 51(17), 11270 (1995)Google Scholar
[9] Zhou, X., Edgar, J. H. and Speakman, S., J. Crystal Growth, 293, 162 (2006)Google Scholar
[10] Michael, J. R., Aselage, T. L., Emin, D. and Kotula, P.G., J. Mater. Res., 20(11), 3004 (2005)Google Scholar
[11] Wang, R.H., Zubia, D., Neil, T. O’, Emin, D., Aselage, T., Zhang, W. and Hersee, S.D., J. Electronic Materials, 29(11), 1304 (2000)Google Scholar
[12] Vetter, W.M., Nagarajan, R., Edgar, J. H. and Dudley, M., Mater. Lett., 58, 1331 (2004)Google Scholar
[13] Nagarajan, R., Xu, Z., Edgar, J. H., Baig, F., Chaudhuri, J., Rek, Z., Payzant, E. A., Meyer, H. M., Pomeroy, J. and Kuball, M., J. Crystal Growth. 273, 431 (2005)Google Scholar
[14] Chen, H., Dissertation. Stony Brook University (2008)Google Scholar
[15] Raghothamachar, B., Dhanaraj, G., Bai, J., and Dudley, M., Micro. Res. Tech. (2006) 343–358 Google Scholar
[16] Shaffner, T., Proc. IEEE, Vol. 8, NO. 9, (2000)Google Scholar
[17] Tuomi, T., J. Synchrotron Rad. (2002) 174–178 Google Scholar
[18] Whiteley, C.E., Mayo, A., Edgar, J.H., Kuball, M., and Zhang, Y. J. Cryst. Growth (2010).Google Scholar