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Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

Published online by Cambridge University Press:  25 February 2011

M. Tabe  and
Y. Kunii
M. Tabe
Affiliation:
Atsugi Electrical Communication Laboratory, NTT, 1839-Ono, Atsugi-shi, Kanagawa 243-01, Japan.
Y. Kunii
Affiliation:
Atsugi Electrical Communication Laboratory, NTT, 1839-Ono, Atsugi-shi, Kanagawa 243-01, Japan.
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Abstract

Lateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 695
Copyright
Copyright © Materials Research Society 1985

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References

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