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Solid Phase Crystallization (SPC) Behavior of Amorphous Si Bilayer Films with Different Concentration of Oxygen: Surface vs. Interface-nucleation

Published online by Cambridge University Press:  14 March 2011

Myung-Kwan Ryu ,
Jang-Yeon Kwon  and
Ki-Bum Kim
Myung-Kwan Ryu
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
Jang-Yeon Kwon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
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Abstract

Solid-phase crystallization (SPC) behavior of a-Si film [a-Si(II)] in which oxygen concentration (CO) is higher at the a-Si/SiO2 interface (CO=5×1021/cm3) than at the film surface (CO=3×1020/cm3) has been investigated. The results were also compared with that of a-Si single layer [a- Si(I), 600 Å] with CO=3×1020/cm3. It has been found that the interface-nucleation was suppressed in the a-Si(II) and the surface-nucleation occurred to make a poly-Si/a-Si (300 Å/300Å) bilayer structure. Many equiaxial grains with sizes of 1∼2 [.proportional]m were formed in the surface- nucleated poly-Si layer. Compared with the results of conventional SPC poly-Si (600 Åthick) in which elliptical grains with sizes of 0.5∼1 [.proportional]m were formed by the interface (a-Si/SiO2)- nucleation, we concluded that the poly-Si/a-Si bilayer scheme is a method to improve the microstructure of SPC poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q6.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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