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Solid Phase Crystallization of LPCVD Amorphous Si Films by Nucleation Interface Control

Published online by Cambridge University Press:  03 September 2012

Eui-Hoon Hwang  and
Jae-Sang Ro
Eui-Hoon Hwang
Affiliation:
Department of Metallurgy and Materials Science, Hong-Ik University Seoul, 121-791, Korea.
Jae-Sang Ro
Affiliation:
Department of Metallurgy and Materials Science, Hong-Ik University Seoul, 121-791, Korea.
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Abstract

A novel method for the fabrication of poly-Si films with a large grain size is reported using solid phase crystallization (SPC) of LPCVD amorphous Si films by nucleation interface control. The reference films used in this study were 1000 Ǻ -thick a-Si films deposited at 500°C at a total pressure of 0.35 Torr using Si2H6/He. Since the deposition condition changes the incubation time, i.e. nucleation rate, and since nucleation occurs dominantly at a-Si/SiO2 interface, we devised the following deposition techniques for the first time in order to obtain the larger gain size. A very thin a-Si layer (~ 50 Ǻ) with the deposition conditions having long incubation time is grown first and then the reference films (~ 950 Ǻ) are grown successively. Various composite films with different combinations were tested. The crystallization kinetics of composite films was observed to be determined by the deposition conditions of a thin a-Si layer at the a-Si/SiO2 interface. Nucleation interface was also observed to be modified by interrupted gas supply resulting in the enhancement of the grain size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 277
Copyright
Copyright © Materials Research Society 1997

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