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Sol-Gel Processing of Lithium Niobate Thin-Layers on Silicon

Published online by Cambridge University Press:  25 February 2011

Dennis J. Eichorst  and
D. A. Payne
Dennis J. Eichorst
Affiliation:
Department of Materials Science and Engineering, and The Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 105 S. Goodwin Avenue, Urbana, IL 61801
D. A. Payne
Affiliation:
Department of Materials Science and Engineering, and The Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 105 S. Goodwin Avenue, Urbana, IL 61801
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Abstract

Sol-gel processing was used for the fabrication of LiNbO3 thin-layers on semiconductors. Two different alkoxide systems were investigated (i.e., ethoxide vs. methoxyethoxide) to determine the role of solution chemistry on the evolution of structure in LiNbO3 layers. An alcohol exchange reaction, which produced lithium niobium methoxyethoxide, proved advantageous with respect to the amount of hydrolysis water content which could be added to give stable solutions. Spin-casting was used for the deposition of thin-layers which crystallized at 500 C on Si. The refractive index of sol-gel derived LiNbO3 was determined to be similar to sputtered or epitaxially grown films. Data are reported for the processing route and the material characteristics. Methoxyethanol based systems appeared to be more forgiving than ethanol based solutions for the fabrication of high-quality thin-layer devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 773
Copyright
Copyright © Materials Research Society 1988

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References

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