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Small Angle X-Ray Scattering (Saxs) and IR Study of Microvoid Dynamics in Annealed RF Sputter-Deposited A-SI:H

Published online by Cambridge University Press:  21 February 2011

H. Jia ,
J. Shinar ,
Y. Chen  and
D. L. Williamson
H. Jia
Affiliation:
Ames Laboratory - USDOE and Physics Dept., Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Physics Dept., Iowa State University, Ames, IA 50011
Y. Chen
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
D. L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
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Abstract

A SAXS and IR study of microvoid distribution and dynamics in a-Si:H deposited by rf sputtering at 200 – 600 W on nominally unheated substrates is described and discussed. The 640 cm-1 band of the 200 W film yielded a total Si-bonded H content CH=21 at. %; the 840 – 890 cm-1 band yielded a dihydride content CH2 3.4 at. %. The SAXS measurements yielded a microvoid volume fraction vf=8.2 vol.%, and tilting SAXS data indicated elongated voids consistent with a columnar microstructure. In the other films, 9<CH<12 at. % and CH2 was negligible, vf was -2 vol. %. Annealing from 250°C to 310°C for 6 hrs resulted basically in no changes of CH and vf. However CH decreased and vf increased significantly after annealing at 350°C and above. The results showed a strong correlation between the IR determined CH and CH2 and the SAXS determined vf.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 281
Copyright
Copyright © Materials Research Society 1992

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References

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