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Size Reduction and Rare Earth Doping of GaN Powders through Ball Milling

Published online by Cambridge University Press:  31 January 2011

Xiaomei Guo ,
Tiju Thomas ,
Kewen Kevin Li ,
Jifa Qi ,
Yangyun Wang ,
Xuesheng Chen ,
Jingwen Zhang ,
Michael G. Spencer ,
Hua Zhao  and
Yingyin Kevin Zou
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Xiaomei Guo
Affiliation:
[email protected], Boston Applied Technologies, Inc., 6F Gill Street, Woburn, Massachusetts, 01801, United States
Tiju Thomas
Affiliation:
[email protected], Cornell University, School of Electrical and Computer Engineering, Ithaca, New York, United States
Kewen Kevin Li
Affiliation:
[email protected], Boston Applied Technologies, Inc., Woburn, Massachusetts, United States
Jifa Qi
Affiliation:
[email protected], Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts, United States
Yangyun Wang
Affiliation:
[email protected], Boston Applied Technologies, Inc., Woburn, Massachusetts, United States
Xuesheng Chen
Affiliation:
[email protected], Wheaton College, Department of Physics and Astronomy, Norton, Massachusetts, United States
Jingwen Zhang
Affiliation:
[email protected], Boston Applied Technologies, Inc., Woburn, Massachusetts, United States
Michael G. Spencer
Affiliation:
[email protected], Cornell University, School of Electrical and Computer Engineering, Ithaca, New York, United States
Hua Zhao
Affiliation:
[email protected], Boston College, Department of Physics, Chestnut Hill, Massachusetts, United States
Yingyin Kevin Zou
Affiliation:
[email protected], Boston Applied Technologies, Inc., Woburn, Massachusetts, United States
Hua Jiang
Affiliation:
[email protected], Boston Applied Technologies, Inc., Woburn, Massachusetts, United States
Baldassare Di Bartolo
Affiliation:
[email protected], Boston College, Department of Physics, Chestnut Hill, Massachusetts, United States
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Abstract

Ball milling of ammonothermally synthesized GaN powders was performed in an ethanol solution for a variety of durations, resulting in average particle sizes of nanometer. The ball milled powders showed an obviously brightened color and improved dispersability, indicating reduced levels of aggregation. X-ray diffraction (XRD) peaks of the ball milled GaN powders were significantly broadened compared to those of the as-synthesized powders. The broadening of the XRD peaks was partially attributed to the reduction in the average particle size, which was confirmed through SEM analyses. On the other hand, rare earth doping of commercial GaN powders was also achieved through a ball mill assisted solid state reaction process. Rare earth salts were mixed with GaN powder by ball milling. The as-milled powders were heat treated under different conditions to facilitate the dopant diffusion. Luminescence properties of the rare earth doped GaN powders at near infrared range were investigated and the results were discussed.

Keywords

luminescencenitridelaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I09-12
Copyright
Copyright © Materials Research Society 2010

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References

1 Ikesue, A., Aung, Y.L., Taira, T., Kamimura, T., Yoshida, K., , K., and Messing, G.L., Annu. Rev. Mater. Res., 36, 397 (2006).Google Scholar
2 Kuramoto, N. and Taniguchi, H., J. Mater. Sci. Lett., 3, 471 (1984).Google Scholar
3 Wu, H., Poitras, C. B., Lipson, M., Spencer, M. G., Hunting, J. and Salvo, F. J. Di, Appl. Phys. Lett., 88, 011921 (2006).Google Scholar
4 Thomas, T., MVS Chandrashekhar, Poitras, C.B., Shi, J., Reiherzer, J.C., DiSalvo, F.J., Lipson, M., and Spencer, M.G. in Rare-Earth Doping of Advanced Materials for Photonic Applications, edited by Dierolf, V., Fujiwara, Y., Hommerich, U., Ruterana, P., Zavada, J. (Mater. Res. Soc. Symp. Proc. 1111, Warrendale, PA, 2009), paper no.1111-D04-01.Google Scholar
5 Citrin, P.H., Northrup, P.A., Birkhahn, R., and Steckl, A.J., Appl. Phys. Lett., 76, 2865 (2000).Google Scholar
6 Wu, H., Poitras, C.B., Lipson, M., and Spencer, M.G., Hunting, J. and DiSalvo, F.J., Appl. Phys. Lett., 86, 191918 (2005).Google Scholar
7 Suryanarayana, C., Progress in Materials Science, 46, 1 (2001).Google Scholar
8 Sakurai, K. and Guo, X., Materials Science and Engineering, A304-306, 403 (2001).Google Scholar
9 Sun, G., Liu, X., Tse, S.D., Brown, E.E., Hömmerich, U., Trivedi, S. and Zavada, J.M. in Rare-Earth Doping of Advanced Materials for Photonic Applications, edited by Dierolf, V., Fujiwara, Y., Hommerich, U., Ruterana, P., Zavada, J. (Mater. Res. Soc. Symp. Proc. 1111, Warrendale, PA, 2009), paper no.1111-D02-08.Google Scholar
10 Zavada, J.M., “Rare Earth Impurities in Wide Gap Semiconductors,” Processing of Wide Band Gap Semiconductors, edited by Pearton, S.J. (Elsevier Science Publishers, New York, 2000), p.354.Google Scholar