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Site Occupation of Implanted Te in Gaas As a Function of Implantation Dose

Published online by Cambridge University Press:  26 February 2011

G. Langouche ,
D. Schroyen ,
H. Bemelmans ,
M. Van Rossum ,
W. Deraedt  and
M. de Potter
G. Langouche
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
D. Schroyen
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
H. Bemelmans
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
W. Deraedt
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
M. de Potter
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
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Abstract

Te atoms were implanted in GaAs with doses ranging from 1013 to 1016 atoms/cm2, and annealed with the rapid thermal annealing technique. The samples were studied by Mössbauer Spectroscopy, Rutherford Backscattering Spectroscopy – Channeling, and the Van der Pauw-method. While at the lowest implantation dose an unperturbed substitutional site is observed at all annealing temperatures, at the highest implantation dose a strong deviation from a central position in an unperturbed configuration is observed at all temperatures. At the intermediate doses a high degree of substitutionality is observed between annealing temperatures of 200°C and 500°C only.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 527
Copyright
Copyright © Materials Research Society 1988

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References

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