Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:26:25.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Site Balance Models in Plasma Processing: A Comparison to Molecular Dynamics Simulations

Published online by Cambridge University Press:  15 February 2011

M.E. Barone  and
D.B. Graves
M.E. Barone
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720.
D.B. Graves
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720.
Get access

Abstract

Molecular dynamics (MD) simulations were conducted of Cl+ impact (at 10, 25 and 50 eV) of an initially bare silicon surface, leading to steady state coverage of Cl in a mixed chlorosilyl layer. Our main goal in this study was to compare the MD predictions to models of ion-assisted etching involving the concept of a site balance. For the case of 50 eV Cl+ etching silicon, the coverage vs. exposure results in the simulation could be reasonably well reproduced in a site balance model, but only if the correct parameters in the model were taken from the simulation. The results of the comparison suggest that MD simulations can be helpful in the development of physically sound phenomenological models of ion-assisted etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 29
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Gottscho, R. and Jurgensen, C., J. Vac. Sci. Technol. B. 10, 2133 (1992).Google Scholar
2 Graves, D., IEEE Transactions on Plasma Sciences 22, 31 (1994).Google Scholar
3 Singh, V. and Shaqfeh, E., J. Vac. Sci. Technol. B. 12, 2952 (1994).Google Scholar
4 Hamaguchi, S. and Dalvie, M., J. Vac. Sci. Technol. A. 12, 2745 (1994).Google Scholar
5 Hagstrom, H., Phys. Rev. 122, 83 (1961).Google Scholar
6 Barone, M. and Graves, D., J. Appl. Phys. 77, 1263 (1995).Google Scholar
7 Feil, H., Dieleman, J., and Garrison, B., J. Appl. Phys. 74, 1303 (1993).Google Scholar
8 Weber, T. and Stillinger, F., J. Chem. Phys. 92, 6239 (1990).Google Scholar