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Sintered Ohmic Contacts to GaAs

Published online by Cambridge University Press:  26 February 2011

Gregory T. Cibuzar
Gregory T. Cibuzar*
Affiliation:
Microelectronics Laboratory for Research and Education, University of Minnesota, 200 Union Street, Minneapolis, MN 55455
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Abstract

The formation of reliable low resistance ohmic contacts to GaAs and other III-IV compound semiconductors is essential for useful device and circuit fabrication. We have modified the standard AuGe ohmic contact process by using rapid thermal annealing at temperatures less than the AuGe eutectic temperature to form contacts based on sintering rather than alloying. Compared with alloyed contacts, sintered contacts have similar electrical performance, superior morphology, and improved reliability. Results from secondary mass spectroscopy analysis of sintered and alloyed contacts will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 443
Copyright
Copyright © Materials Research Society 1992

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References

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