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Single-Source Approach for The Growth of I-III-VI Thin Films

Published online by Cambridge University Press:  01 February 2011

Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
Theivanayagam C. Deivaraj
Affiliation:
Dept of Chemistry, 3 Science Drive 3, National University of Singapore, Singapore.
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
Jagadese J. Vittal
Affiliation:
Dept of Chemistry, 3 Science Drive 3, National University of Singapore, Singapore.
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Abstract

The ternary chalcopyrite semiconductors I-III-VI are currently used for photovoltaic solar cell applications. In this study, AgIn5S8 thin films were prepared from a series of single-source bimetalorganic precursors, e.g. [(PPh3)2AgIn(SC{O}R)4] (R = alkyl) by aerosol assisted chemical vapour deposition (AA-CVD). The compounds can be used as single-source precursors for the deposition of ternary compounds (I-III-VI) by one-pot reaction using CVD process and they are found to be air stable, which is favourable in comparison with metal alkyl compounds, which are found to be pyrophoroic. The optimum growth temperature for the preparation of these films on glass and Si(100) substrates, was found to be above 350°C in terms of crystallinity, although deposition occurred at low temperatures. The films have been investigated using XRD, SEM and EDS. SEM analysis shows that all films are microcrystalline but have different morphologies depending on the growth temperatures. XRD results show evidence of the crystalline nature of these films. The results of this comprehensive study are presented and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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