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A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

Published online by Cambridge University Press:  17 March 2011

M. Califano  and
P. Harrison
M. Califano
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, U.K.
P. Harrison
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, U.K.
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Abstract

A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our ca agreement with that deduced from capacitance and photoluminescence measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 642: Symposium J – Semiconductor Quantum Dots II , 2000 , J1.4.1
Copyright
Copyright © Materials Research Society 2001

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References

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