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Single Wafer CVD of Silicon Nitride for Cmos Gate Applications

Published online by Cambridge University Press:  10 February 2011

C. Pomarede ,
C. Werkhoven ,
J. Weidmann ,
T. Bergman ,
A. Gschwandtner  and
M. Houssa
C. Pomarede
Affiliation:
ASM America, 3440East University Drive, Phoenix, AZ 85034, USA
C. Werkhoven
Affiliation:
ASM America, 3440East University Drive, Phoenix, AZ 85034, USA
J. Weidmann
Affiliation:
ASM America, 3440East University Drive, Phoenix, AZ 85034, USA
T. Bergman
Affiliation:
ASM America, 3440East University Drive, Phoenix, AZ 85034, USA
A. Gschwandtner
Affiliation:
Siemens AG, Otto Hahn Ring 6, D-81739 Munich, Germany
M. Houssa
Affiliation:
Imec, Kapeldreef 75, B-3001, Leuven, Belgium
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Abstract

The MESC/CTMC compatible, Advance 2500 cluster tool made by ASM is evaluated for the manufacturing of CMOS gate stack structures based on CVD silicon nitride rather than thermally grown silicon oxide as the gate dielectric material, and polysilicon as the gate electrode material. With two different CVD chemistries excellent growth characteristics and thickness uniformity control of the silicon nitride is demonstrated. Electrical assessment reveals lower leakage current as compared to silicon oxide and minimal hysteresis in C-V curves, even for gates stacks that have an equivalent oxide thickness below 1.5nm. The best properties are for silicon nitride films that also have a low H2 content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 147
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Song, S.C., Luan, H.F., Chen, Y.Y., Gardner, M., Fulford, J., Allen, M. and Kong, D.L., Technical Digest IEDM 1998, San Francisco, pp 373–376.Google Scholar
2 Tseng, Hsing-Huang, O'Meara, Dave L., Tobin, Philip J., Wang, Victor S., Guo, Xin, Hegde, Rama, Yang, Isabel Y., Gilbert, Percy, Cotton, Randy, and Herbert, Liz, Technical Digest IEDM 1998, San Fransisco, pp 793–796.Google Scholar
3 Martin, Francois, Bertin, Francois, Sprey, Hessel and Granneman, Ernst, Semicond. Sci. Technnol. 6, 1100 (1991).10.1088/0268-1242/6/11/012Google Scholar
4 Werkhoven, C., Verhaar, N., in 4th Int. Conf on Advanced Thermal Processing of Semiconductors (RTP '96, Boise), pp 443–446.Google Scholar