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Single Source Precursors for the Growth of Metal-Chalcogenide Thin Films

Published online by Cambridge University Press:  22 February 2011

Allen L. Seligson ,
Philip J. Bonasia ,
John Arnold ,
Kin-Man Yu ,
Jim M. Walker  and
Edith D. Bourret
Allen L. Seligson
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory. Berkeley CA 94720
Philip J. Bonasia
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
John Arnold
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory. Berkeley CA 94720
Kin-Man Yu
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
Jim M. Walker
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
Edith D. Bourret*
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
*
† To whom correspondence should be adressed
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Abstract

We have recently reported the growth of ZnTe and CdTe thin films from the novel volatile single-source precursors Zn(sitel)2 and Cd(sitel)2 [sitel = TeSi(TeSi(siMe3)3]. In an effort to understand the role played by the bulky substituents, we have prepared a number of related compounds and have investigated their potential for the growth of II-VI materials. We now describe the synthesis and characterization of M[EX(SiMe3)3]2 (M = Zn, Cd, Hg for E = Te, X = C; M = Zn for E = Se, X = C, Si) and their use as precursors molecules for the growth of ZnSe, ZnTe, CdTe and HgTe. The thin films were characterized by Rutherford Back scattering spectrometry (RBS) and X-ray diffraction. Pyrolysis reaction conditions for the alkyl and silyl chalcogenolates are also compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 665
Copyright
Copyright © Materials Research Society 1993

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References

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