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Single Crystal NiSi2/Si Interfaces: Fabrication, Structures, and Schottky Barrier Heights

Published online by Cambridge University Press:  25 February 2011

R. T. Tung ,
J. P. Sullivan ,
F. Schrey  and
A. F. J. Levi
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
J. P. Sullivan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
A. F. J. Levi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, N.J. 07974
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Abstract

Growths of single crystal NiSi2 on Si(lll), (100) and (110) are described. The atomic structures at these interfaces have also been studied and found to influence the observed Schottky barrier height significantly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 71
Copyright
Copyright © Materials Research Society 1991

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References

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