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Single Crystal InSb Nanowires: Synthesis, Characterization, Properties and Applications

Published online by Cambridge University Press:  01 February 2011

Qi Laura Ye
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, NASA Ames Research Center, Mail Stop 229-1, Moffett Field, Mountain View, CA, 94035, United States, (650) 604 0497, (650) 604 5244
Toshishige Yamada
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Mail Stop 229-1, Moffett Field, Mountain View, CA, 94035, United States
Hongbing Liu
Affiliation:
[email protected], ELORET, 465 S. Mathilda Ave., Suite 103, Sunnyvale, CA, 94086, United States
Raymond Scheffler
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Mail Stop 229-1, Moffett Field, Mountain View, CA, 94035, United States
Natalio Mingo
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Mail Stop 229-1, Moffett Field, Mountain View, CA, 94035, United States
Ryan Leverenz
Affiliation:
[email protected], NASA Ames Research Center, Center for Nanotechnology, Mail Stop 229-1, Moffett Field, Mountain View, CA, 94035, United States
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Abstract

We report the first large-scale synthesis of single crystal InSb nanowires using vapor-liquid-solid (VLS) transport process. Narrow growth window for achieving single crystal InSb nanowires has been discovered. Our batch produced InSb nanowires are 50-180 nm in diameter and 10-30 μ in length. Materials composition analysis by Energy-Dispersive X-ray Spectroscopy (EDAX) reveals that the as-grown InSb nanowires are pure single crystals of InSb. Structural analysis by High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) reveals that InSb nanowires have body-centered-cubic (BCC) crystal structure with cubic unit cell length of 10.15 Å. The nanowire growth direction is found to be [001], 45 degrees toward the most dense lattice planes in BCC structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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