Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T06:42:17.201Z Has data issue: false hasContentIssue false
  • English
  • Français

Simultaneous Monitoring of Wafer- and Environment-States During Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

K. J. Knopp ,
J. R. Ketterl ,
D. H. Christensen ,
T. P. Pearsall  and
J. R. Hill
K. J. Knopp
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
J. R. Ketterl
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
D. H. Christensen
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected] Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
T. P. Pearsall
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
J. R. Hill
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303, [email protected]
Get access

Abstract

We report the simultaneous monitoring of the environment-state and wafer-state during epitaxial crystal growth using a single real-time measurement. Atomic absorption spectroscopy (AAS) is used to monitor the incident molecular beam flux while UV reflectance (UVR) at 396 nm with an incident angle of 78° is used to monitor growth on the wafer. We have studied the utility of AAS/UVR monitoring of AlxGa1-xAs deposition: AlAs growing on GaAs, GaAs on AlAs, and superlattice growth. Additionally, optical multichannel spectroscopy (OMS) data were acquired throughout the growth of a distributed Bragg reflector (DBR). The relationship of the structure of the real-time OMS data to absorption, optical path length variation, and differential layer thickness variations is also discussed. Numerical simulations of the real-time wafer-state monitors using pseudodielectric constants, appropriate at a growth temperature of 579 °C, show good agreement with measured spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 761
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Jewell, J.L., Olbright, G.R., Bryan, R.P., and Scherer, A., Photonics Spectra, P. 126 (November, 1992).Google Scholar
[2] Jewell, J.L., Harbison, J.P., Scherer, A., Lee, Y.H., and Florez, L.T., IEEE J. Quantum Electron. 27, 1332 (1991).Google Scholar
[3] Armstrong, J.V., Farrell, T., Joyce, T.B., Kightlcy, P., Bullough, T.J., and Goodhew, P.J., Crystal Growth 120, 84 (1992).Google Scholar
[4] Kometani, T.Y. and Wiegmann, W., J. Vac. Sci. Technol. 12, 933 (1975).Google Scholar
[5] Kuo, C.H., Anand, S., Fathollahnejad, H., Ramamurti, R., Droopad, R., and Maracas, G.N., J.Vac. Sci. Technol. B 13, 681 (1995).Google Scholar
[6] Chalmers, S.A. and Killeen, K.P., Appl. Phys. Lett. 63, 3131 (1993).Google Scholar