Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:31:49.354Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

Published online by Cambridge University Press:  28 February 2011

E. Chason ,
P. Bedrossian ,
J. Y. Tsao ,
B. W. Dodson  and
S. T. Picraux
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. Bedrossian
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

We have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 743
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bedrossian, P., Houston, J.E., Tsao, J.Y., Chason, E. and Picraux, S.T., Phys. Rev. Lett. 67, 124 (1991).CrossRefGoogle Scholar
2. Aarts, J., Gerits, W.M., and Larsen, P.K., Appl. Phys. Lett. 48, 931 (1986).CrossRefGoogle Scholar
3. Bedrossian, P. and Klitsner, T., Phys. Rev. B, (Dec. 15, 1991), in press.Google Scholar
4. Chason, E. and Dodson, B.W., J. Vac. Sci. Technol. A9, 1545 (1991).CrossRefGoogle Scholar
5. Chason, E., Bedrossian, P., Houston, J.E., Tsao, J.Y., Dodson, B.W. and Picraux, S.T., Appl. Phys. Lett.59, in press.Google Scholar
6. Abraham, F.F. and White, G.M., J. Appl. Phys. 41, 1841 (1970).CrossRefGoogle Scholar
7. van Hove, J.M., Pukite, P.R., Cohen, P.I. and Lent, C.S., J. Vac. Sci. Technol. A4. 1251 (1986).Google Scholar