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Simulation Study of IBE Process for III-V Compounds in Mesa and Trenches

Published online by Cambridge University Press:  10 February 2011

L. Houlet ,
A. Rhallabi  and
G. Turban
L. Houlet
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes, UMR 6502-CNRS-Univ de Nantes, France
A. Rhallabi
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes, UMR 6502-CNRS-Univ de Nantes, France
G. Turban
Affiliation:
Laboratoire des Plasmas et des Couches Minces, Institut des Matériaux de Nantes, UMR 6502-CNRS-Univ de Nantes, France
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Abstract

The Ion Beam Etching (IBE) model is developed assuming the analogy between the evolution of hydrodynamic surfaces and that of vacuum-solid interfaces. The main physical phenomenon in the IBE is the ion sputtering where the transfer of ion energy to the surface allows to eject the surface atoms. The local etching rate is thus proportional to the energetic flux and to the sputtering yield. Mask erosion and shadowing are taken into account in the model. The angular dependence of the sputtering yield permits to underscore the faceting and trenching phenomena which respectively represent the formation of the facets in mask comers and the overetching in the trench sides. Besides, the effect of mask erosion on pattern transfer of both trench and mesa structures is studied. In comparison with the experimental profile, the simulated etching profile of the mesa, based on the IBE model, shows a good agreement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 225
Copyright
Copyright © Materials Research Society 1998

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References

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