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Simulation of the Nucleation and Growth of Si Grains Inside Au Thin Films

Published online by Cambridge University Press:  15 February 2011

A. A. Pasa ,
M. Neugebauer ,
W. Losch  and
G. H. Bauer
A. A. Pasa
Affiliation:
Departamento de Fisica - CFM - UFSC, 88.040 - 900 - Florianópolis, SC, Brazil.
M. Neugebauer
Affiliation:
IPE - Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG.
W. Losch
Affiliation:
PEMM/COPPE/UFRJ, C.P. 68505, 21945-970 Rio de Janeiro, RJ, Brazil.
G. H. Bauer
Affiliation:
Fakultàt Physik, Carl von Ossietzky Universität, D-2900 Oldenburg, FRG.
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Abstract

The Si crystallization process induced by the presence of a gold thin film was computer simulated using a random resistor network and concepts of the percolation theory. The model considers initially a pure Au resistor network. The random appearance of Si nuclei corresponds to a high local variation of the resistance value. The crystallization process was simulated step-by-step and parameters as nucleation rate and growth rate were tested. Considering an interface limited reaction process, the simulated results are in good agreement with experimentally obtained in-situ electrical measurements and scanning electron microscopy micrographies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 167
Copyright
Copyright © Materials Research Society 1995

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References

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