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Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm

Published online by Cambridge University Press:  31 January 2011

Christoph Ebm  and
Gerhard Hobler
Christoph Ebm
Affiliation:
[email protected], IMS Nanofabrication AG, Vienna, Austria
Gerhard Hobler
Affiliation:
[email protected], Vienna University of Technology, Institute of Solid State Electronics, Vienna, Austria
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Abstract

Ion-beam induced etching and deposition rates are proportional to the flux of recoils reaching the surface. Based on this finding we propose an improved algorithm for etching and deposition simulations. In this algorithm the recoil flux at each point on the surface is calculated by summing up the recoil fluxes originating from ions impinging on any other surface point. The latter are determined by interpolation in tables calculated by binary collision simulations. For concave surfaces a correction to this algorithm is proposed. Fluxes calculated by this model are in good agreement with binary collision simulations of collision cascades in the same 2-d structure. Consistent with experimental findings, the model predicts that deposited pillars are broader than the ion beam, while etched trenches do not show such broadening. The pillar broadening is related to the lateral straggling of the recoils.

Keywords

ion-beam assisted depositionion-beam processingsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD03-04
Copyright
Copyright © Materials Research Society 2009

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References

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