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SIMS Measurements of Oxygen in Heavily-Doped Silicon

Published online by Cambridge University Press:  28 February 2011

R. J. Bleiler ,
R. S. Hockett ,
P. Chu  and
E. Strathman
R. J. Bleiler
Affiliation:
Monsanto Electronic Materials Company, St. Louis, MO. 63167
R. S. Hockett
Affiliation:
Monsanto Electronic Materials Company, St. Louis, MO. 63167
P. Chu
Affiliation:
Charles Evans & Associates, San Mateo, CA 94402
E. Strathman
Affiliation:
Charles Evans & Associates, San Mateo, CA 94402
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Abstract

Oxygen precipitation in CZ silicon is known to provide beneficial yield improvements in integrated circuit processing if the location and amount of precipitation can be properly controlled. The concentration of oxygen in the unprocessed silicon substrate is one of the most important variables to control for achieving these improvements. Fourier Transform Infrared Spectroscopy (FTIR) has successfully been used to measure [0] in silicon when the silicon resistivity is greater than about 0.1 Ω-cm. At lower resistivities typical of p+ and n+ substrates used for epi-wafers as free carrier absorption interferes with the FTIR measurement of bulk [0].

This work will focus on how to quantitatively measure oxygen in heavily-doped silicon by Secondary Ion Mass Spectrometry (SIMS) with a high sample thruput, low background signal, and tight σ/x distribution. SIMS calibration is performed against FTIR-calibrated substrates with resistivity higher than 0.1Ωcm. Typical background signals as measured in FZ are a factor of 20 below signals in CZ, and the 160− signal in CZ is over 105 count/sec. resulting in an excellent signal-to-noise ratio for each single measurement. Typical thruput is 18 samples per day where each sample is analyzed four to five times to obtain a σ/x of 3% for an oxygen level of 15 ppma (ASTM F121−80).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 73
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Craven, R. A. in “Impurity Diffusion and Gettering in Silicon,” Materials Research Society Symposium Proceedings, Vol.36, eds. Fair, R. B., Pearce, C. W., Washburn, J. (Materials Research Society, Pittsburgh, 1985), p. 159.Google Scholar
2. Shimura, F., Dyson, W., Moody, J. W. and Hockett, R. S. in “VLSI Science and Technology/1985,” eds. Bullis, W. B. and Broydo, S. (The Electrochemical Society, Princeton, 1985), p. 507.Google Scholar
3. Harada, H., Itoh, T., Ozawa, N. and Abe, T. in “VLSI Science and Technology/1985,” eds. Bullis, W. B. and Broydo, S. (The Electrochemical Society, Princeton, 1985), p. 526.Google Scholar
4. Tsuya, H., Kondo, Y. and Kanamori, M., Jpn. J. Appl. Phys. 22, L16 (1983).Google Scholar
5. deKock, A. J. R. and Wygert, W. M. van de, Appl. Phys. Lett. 38, 888 (1981).Google Scholar
6. Kaiser, W., Keck, P. H. and Lange, C. F., Phys. Rev. 101, 1264 (1956).Google Scholar
7. Iizuka, T., Takasu, S., Tajima, M., Arai, T., Nozaki, T., Inoue, N., and Watanabe, M., J. Electrochem. Soc. 132, 1707 (1985).CrossRefGoogle Scholar
8. Kaiser, W. and Keck, P. H., J. Appl. Phys. 28, 882 (1957).Google Scholar
9. Baker, J. A., Solid State Electron. 13, 1431 (1970).Google Scholar
10. Rath, H. J., Stallhofer, P., Huber, D. an Schmitt, B. F., J. Electrochem. Soc., 131, 1920 (1984).Google Scholar
11. Tsuya, T., Kanamori, M., Takeda, M. and Yasuda, K. in “VLSI Science and Technology/1985,” eds Bullis, W. B. and Broydo, S. (The Electrochemical Society, Princeton, 1985), p. 517.Google Scholar
12. Andersen, C. A., Int. J. Mass Spectrom, Ion Phys. 3, 413 (1970).Google Scholar
13. Andersen, C. A. and Hinthorne, J. R., Anal. Chem. 45, 1421 (1973).Google Scholar
14. Williams, P., Lewis, R. K., Evans, C.A. Jr. and Hanley, P. R., Anal. Chem. 49, 1399 (1977).Google Scholar
15. Storms, H. A., Brown, K. F. and Stein, J. D., Anal. Chem. 49, 2023(1977).Google Scholar
16. Wittmaack, K., Nucl. Instrum. Methods Phys. Res. 218, 327 (1983).CrossRefGoogle Scholar