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A Simple Optical Pyrometer for in Situ Temperature Measurement During Cw Argon Laser Annealing

Published online by Cambridge University Press:  15 February 2011

T.O. Sedgwick
T.O. Sedgwick
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, 10598
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Abstract

A standard optical disappearing hot wire micropyrometer was modified with a long working distance magnifier to enlarge the laser heated spot so that the maximum temperature of the center of the spot could be observed and measured with some certainty. In situ temperature measurements were made on As ion implanted Si <100> chips using an Argon Ion laser with the beam slightly defocused to a 50–100μm diameter spot on the Si surface. The data curves show a linear function of measured temperature with laser power up until the melting point is reached. By using the Si m.p. as a calibration point, the temperature can be reproducibly measured within a few tens of degrees. Comparisons of actual re-growth rates with those calculated from the well known solid state Si regrowth expression as a function of temperature yields good agreement between measured and calculated temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 147
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Williams, J.S., Brown, W.L., Leamy, H.H., Poate, J.M., Rodgers, J.W., Rousseau, D., Rozgonyi, G.A., Shelnutt, J.A., Sheng, T.T., Appl. Phys. Lett. 33, 542 (1978); andGoogle Scholar
1a Auston, D.H., Golovchenko, J.A., Smith, P.R., Surko, C.M. and Venkatesan, T.N.C., Appl. Phys. Lett. 33, 539, (1978).Google Scholar
2. Gat, A., Lietoila, A. and Gibbons, J.F., J. Appl. Phys. 50, 2929 (1979).CrossRefGoogle Scholar
3. Lo, H.W. and Compaan, A., J. Appl. Phys. 51 (3), 1565 (1980).CrossRefGoogle Scholar
4. Sedgwick, T.O. submitted to Appl. Phys. Lett.Google Scholar
5. Siregar, M.E.R., Luthy, W. and Affolter, K., Appl. Phys. Lett., 36, (10) 15, May 1980.Google Scholar
6. Csepregi, L., Mayer, J.W. and Sigmon, T.W., Appl Phys. Lett. 29, 92 (1976).Google Scholar
7. Lax, M., Laser-Solid Interactions and Laser Processing 1978, ed. Ferris, S.D., Leamy, H.J. and Poate, J.M., American Inst. of Physics, New York, 1979, AIP Conference Proceedings Number 50, p 149.Google Scholar