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Simple Fabrication of High Density Quantum Dot Arrays Using Anodic Aluminum Oxide Mask

Published online by Cambridge University Press:  21 March 2011

Joon-Ho Sung
Affiliation:
Department of Chemistry and School of Molecular Science - BK21, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
Heesung Moon
Affiliation:
Department of Chemistry and School of Molecular Science - BK21, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
Jae Ho Bahng
Affiliation:
Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea
Ja-Yong Koo
Affiliation:
Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea
Bongsoo Kim
Affiliation:
Department of Chemistry and School of Molecular Science - BK21, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
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Abstract

We fabricated quantum dot arrays using anodic alumina mask. We grew an alumina template on Si wafers by two-step anodization. The porous alumina template thus grown is used as a mask for metal deposition. After thermal evaporation and removal of the mask, we fabricated the quantum dot arrarys on a Si substrate. Using this template-assisted method we obtained a high density array of quantum dots in a large scale. These quantum dots have a narrow size distribution which can be easily controlled by a pore widening of templates from 20 to 60 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

Refference

1. Li, A.P., Müller, F., Birner, A., Nielsch, K., and Gösele, U., J. Appl. Phys. 84, 6023 (1998)Google Scholar
2. Keller, F., Hunter, M. S., Robinson, D. L., J. Electrochem. Soc. 100, 411 (1953)Google Scholar
3. Masuda, H., Fukuda, K., Science 268, 1446 (1995)Google Scholar
4. Chen, P., Kuo, C., Tsai, T., Wu, B., Hus, C., and Pan, F., Appl. Phys. Lett. 82, 2796 (2003)Google Scholar
5. Crouse, D., Lo, Y.-H., Miller, E., and Crouse, M., Appl. Phys. Lett. 76, 49 (2000)Google Scholar
6. Asoh, H., Matsuo, M., Yosihama, M., and Ono, S., Appl. Phys. Lett. 83, 4408 (2003)Google Scholar
7. Sander, Melissa S. and Tan, Le-Shon, Adv. Funct. Mater. 13, 393 (2003)Google Scholar