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Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

Published online by Cambridge University Press:  15 February 2011

Fernando A. Ponce
Fernando A. Ponce*
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, California, USA
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Abstract

The structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 285
Copyright
Copyright © Materials Research Society 1981

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References

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