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Silicon Wafer Subsurface Characterization with UV/Millimeter-Wave Technique

Published online by Cambridge University Press:  10 February 2011

Yoh-Ichiro Ogita  and
Yuichiro Gan-nen
Yoh-Ichiro Ogita
Affiliation:
Kanagawa Institute of Technology & Electronic Engineering, 1030 Shimo-Ogino, Atsugi, Kanagawa 243–0292, JAPAN
Yuichiro Gan-nen
Affiliation:
Kanagawa Institute of Technology & Electronic Engineering, 1030 Shimo-Ogino, Atsugi, Kanagawa 243–0292, JAPAN
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Abstract

In subsurface characterization for Si wafers using a photoconductivity technique with a ultra-violet photoexcitation and millimeter wave reflection, high sensitivity technique for100 GHz was discussed experimentally and theoretically. The technique detected photoconductivity decays measured for p/p+ and n/n+ epitaxial wafers. The epilayer contaminated with Mo and Fe was characterized by the technique. Photoconductivity amplitude (PCA) intensity measured for as-polished Si wafers in commercial use after removing the subsurface by SC1 cleanings well reflected the behavior of removal of slight subsurface damage induced by mirror-polishing. The damage depth was determined to be 21 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 631: Symposium AA – Millimeter-/Submillimeter-Wave Technology Materials, Devices and Diagnostics , 2000 , AA2.5
Copyright
Copyright © Materials Research Society 2000

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References

REFERNCES

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