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Published online by Cambridge University Press: 01 February 2011
This paper describes the surface texturing mechanism on crystalline Si using hydrogen radicals generated by a tungsten hot filament. Inverted pyramid or labyrinthV groove structure could be obtained by particle deposition before etching. Mesh like tungsten particle layer, works as an etching mask against hydrogen radical, was obtained when silicon substrate was used. On the other hand, tungstem particles were not deposited as mesh like pattern when SiO2/Si substrate was used. The results suggest that evaporation of silicon hydrides from the silicon surface by hydrogen radical etching causes the mesh like pattern deposition of tungsten particles. Increase of filament current enables short time texturing process of less than 1 minute.
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