Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T10:12:06.137Z Has data issue: false hasContentIssue false

Silicon Self-Interstitial Clusters

Published online by Cambridge University Press:  10 February 2011

L. Colombo
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1-20126 Milano, Italy
A. Bongiorno
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1-20126 Milano, Italy
M. ROSATI
Affiliation:
CASPUR, Univ. Roma “La Sapienza”, Ple Moro 5, 00185 Roma, Italy
Get access

Abstract

A tight-binding molecular dynamics investigation on the structure and energetics of self-interstitial clusters in silicon is presented. We discuss how a small number of self-interstitial atoms give rise to the formation of tedrahedally-shaped clusters, while a larger number of defects exhibit a self-organization mechanism driving the system to form rod-like defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Chason, E. et al., J. Appl. Phys. 81, 6513 (1997).Google Scholar
[2] Benton, J.L. et al., J. Appl. Phys. 82, 120 (1997).Google Scholar
[3] Libertino, S. et al., Appl. Phys. Lett. 71, 389 (1997).Google Scholar
[4] Kwon, I. et al., Phys. Rev. B49, 7242 (1994).Google Scholar
[5] Goedecker, S. and Colombo, L., Phys. Rev. Lett. 73, 122 (1994).Google Scholar
[6] Bongiorno, A. et al., Proceedings of the 24th International Conference on the Physics of Semiconductors (Jerusalem, August 1-6, 1998).Google Scholar
[7] Bongiorno, A. et al., in preparation.Google Scholar
[8] Stich, I. et al., Phys. Rev. B 44, 4262 (1991).Google Scholar