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Silicon Quantum Wires Oxidation and Transport Studies

Published online by Cambridge University Press:  28 February 2011

H. I. Liu ,
D. K. Biegelsen ,
N. M. Johnson ,
F. A. Ponce ,
N. I. Maluf  and
R. F. W. Pease
H. I. Liu
Affiliation:
Stanford University, Solid State Laboratory, Stanford, CA. 94305
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Electronic Materials Laboratory, Palo Alto, CA. 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Electronic Materials Laboratory, Palo Alto, CA. 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Electronic Materials Laboratory, Palo Alto, CA. 94304
N. I. Maluf
Affiliation:
Stanford University, Solid State Laboratory, Stanford, CA. 94305
R. F. W. Pease
Affiliation:
Stanford University, Solid State Laboratory, Stanford, CA. 94305
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Abstract

Fabricating well controlled nanostructures and obtaining precise structural, electrical, and optical information from them are essential for understanding die intrinsic properties of silicon (Si) nanostructures, which in turn is important for exploring the potential of quantum confinement induced light emission from crystalline Si. A combination of high resolution electron beam lithography, anisotropic reactive ion etching (RIE), and thermal oxidation has been successfully applied to obtain sub-5 nm Si columnar structures [1]. A transmission electron microscopy (TEM) technique has also been used to characterize die precise structural dimensions of these columns [1]. To obtain the electrical and optical information, a process based on polyimide planarization was developed to establish electrical contacts to these nanostructures. The same process is also applicable for fabricating device structures to study electrically pumped optical response. Preliminary transport studies have confirmed current conduction through die Si nano-pillars and yielded an estimate of die conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 57
Copyright
Copyright © Materials Research Society 1993

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References

[1] Liu, H.I., Maluf, N.I., Pease, R.F.W., Biegelsen, D.K., Johnson, N.M., Ponce, F.A., J. Vac. Sci. Technol. B, 10 (6), (1992).Google Scholar
[2] Canham, L.T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
[3] Brandt, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., and Cardona, M., Solid State Communication, 81, 307 (1992).Google Scholar
[4] Maluf, N.I., Chou, S.Y., McVittie, J.P., Kaun, S.W. J., Allee, D.R., and Pease, R.F.W., J. Vac. Sci. Technol. B, 7 (6), 1497 (1989).Google Scholar
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