Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:34:57.691Z Has data issue: false hasContentIssue false

Silicon L2, 3-Edge Xanes Study of Platinum Silicide Thin Films

Published online by Cambridge University Press:  10 February 2011

S. J. Naftel
Affiliation:
University of Western Ontario, London, Canada.
T. K. Sham
Affiliation:
University of Western Ontario, London, Canada.
S. R. Das
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada.
D.-X. Xu
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada.
Get access

Abstract

Platinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example, Appl. Surf Sci. 53 (1991 ), the entire volume deals with metal silicides and their applications in microelectronics.Google Scholar
2. Das, S. R., Xu, D.-X., Phillips, J., McCaffrey, J., LeBrum, L. and Naem, A., Mater. Res. Soc. Proc. 318, 129 (1994).Google Scholar
3. Sham, T. K., Naftel, S. J., Bzowski, A., Das, S. R., Xu, D.-X., Heald, S. M., Brewe, D., and Kuhn, M., Mater. Res. Soc. Proc. 402, 587 (1996).Google Scholar
4. Naftel, S. J., Bzowski, A., Sham, T. K., Xu, D.-X., and Das, S. R., XAFS IX proceedings, J. de Phys. (in press).Google Scholar
5. Kasrai, M., Lennard, W. N., Brunner, R. W., Bancroft, G. M., Bardwell, J. A. and Tan, K. H., Appl. Surf Sci. Lett. (in press).Google Scholar
6. Henke, B. L., Lee, P., Tanaka, T. J., Shimabukuro, R. L., and Fujikawa, B. K., At. Data Nucl. Data Tables 27, 1 (1982).Google Scholar