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Silicon Devices Fabricated by Using Laser Irradiation Process

Published online by Cambridge University Press:  15 February 2011

M. Tamura ,
N. Natsuaki ,
M. Miyao ,
M. Ohkura ,
F. Murai ,
E. Takeda ,
S. Minagawa  and
T. Tokuyama
M. Tamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
N. Natsuaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Ohkura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
F. Murai
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
E. Takeda
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
S. Minagawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

The advantages and disadvantages of both pulsed and cw scanned laser processing for Si devices are discussed. In particular, adaptions of laser processes for MOSFETs and bipolar structures are described from the viewpoint of active layer annealing. Moreover, MOSFETs fabricated in laser induced grown Si films on Si substrates having SiO2 patterns by bridging epitaxy, are discussed, as a function of sample structures, film formation conditions and laser irradiation conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 567
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Koyanagi, M., Tamura, H., Miyao, M., Hashimoto, N. and Tokuyama, T., Appl. Phys. Lett. 35, 621 (1979).Google Scholar
2. Teng, T. C., Shiau, Y., Chen, Y. S., Skinner, C., Peng, J. and Palkuti, L., Laser and Electron-Beam Solid Interactions and Materials Processing eds. Gibbons, J. F., Hess, L. D. and Sigmon, T. W. (North–Holland, New York 1981) p. 391.Google Scholar
3. Toyabe, T. and Asai, S., IEEE Trans. Electron Devices, ED–26, 453 (1979).Google Scholar
4. Furukawa, S., Matsumura, H. and Ishiwara, H., Jpn. J. Appl. Phys. 11, 134 (1972).Google Scholar
5. Seidel, T. E., Parrillo, L. C. and Melone, T. G., Electrochem. Soc. Proc. Vol. 78–3 (1978) p. 517.Google Scholar
6. Natsuaki, N., Miyazaki, T., Ohkura, M., Nakamura, T., Tamura, M. and Tokuyama, T. in ref. 2, p. 395.Google Scholar
7. Hendel, R. H., Casey, D. D. and Bickford, C. U., J. Vac. Sci. Technol. 18, 818 (1981).Google Scholar
8. Sandow, P. M., Electrochem. Soc. Proc. vol. 80–1 (1980) p. 187.Google Scholar
9. Tamura, M., Tamura, H. and Tokuyama, T., Jpn. J. Appl. Phys. 19, L23 (1980).Google Scholar
10. Tamura, M., Tamura, H., Miyao, M. and Tokuyama, T., Jpn. J. Appl. Phys. 20 (1981) Suppl. 20–1, p. 43.Google Scholar
11. Tamura, M., Ohkura, M. and Tokuyama, T., Jpn. J. Appl. Phys. 21 (1982) Suppl. 21–1 (to be published).Google Scholar
12. Tasch, A. F., Holloway, T. C., Lee, K. F. and Gibbons, J. F., Electron. Lett. 15, 435 (1979).CrossRefGoogle Scholar
13. Kamins, T. I., Lee, K. F., Gibbons, J. F. and Saraswat, K.C., IEEE Trans. Electron. Devices, ED–27, 290 (1980).Google Scholar
14. Kamins, T. I. and Pianetta, P. A., IEEE Electron Device Lett. EDL–l, 214 (1980).Google Scholar
15. Lam, H. W., IEDM Tech. Digest, IEEE, Washington, D.C., (1980) p. 559.Google Scholar
16. Magee, T. J., Palkuti, L. J., Ormond, R., Leung, C. and Graham, S., Appl. Phys. Lett. 38, 248 (1981).CrossRefGoogle Scholar
17. Sakurai, J., Mori, H. and Nakano, M., Jpn. J. Appl. Phys. 20, L176 (1981).Google Scholar
18. Tsaur, B. Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J. and Mountain, R. W., Appl. Phys. Lett. 39, 561 (1981).Google Scholar