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Silicon Carbon Alloys Produced by VHF and Conventional PECVD. A Comparison of their Properties.

Published online by Cambridge University Press:  16 February 2011

G. Crovini ,
F. Demichelis ,
C.F. Pirri ,
E. Tresso ,
J. Meier ,
S. Dub Ail  and
A. Shah
G. Crovini
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
F. Demichelis
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
C.F. Pirri
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
E. Tresso
Affiliation:
Department of Physics, Politecnico of Turin, C.so Duca degli Abruzzi 24, 10129, Torino, Italy
J. Meier
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
S. Dub Ail
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
A. Shah
Affiliation:
Institutde Microtechnique, University of Neuchatel, Breguet 2, CH-2000, Neuchatel, Switzerland
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Abstract

The Very High Frequency (70 MHz) PECVD has recently proven its ability to produce Amorphous silicon with high deposition rates (10 Å/s) without affecting the quality of the Material. A comparative study of the optoelectronic properties of undoped silicon carbon alloys produced by Very High Frequency and by conventional RF (13.56 MHz) is carried out. Conductivity, infrared absorption, optical transmission and deep defect densities via PDS and ESR have been Measured. Deposition parameters under study aie methane fraction and hydrogen dilution. In contrast to conventional PECVD, we observe for VHF depositions an increase of the deposition rate with the addition of Methane. Larger energy gap and smaller Urbach energy values seem to indicate a better incorporation of carbon in the VHF case. A study of the degradation induced by light is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 481
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Hamakawa, Y., Okamoto, H. and Tawada, Y., Int. J. Solar Energy 1, 125 (1982)CrossRefGoogle Scholar
2. Catalano, A., Fortmann, C., Newton, J., Arya, R.R. and Wood, G., Tech. Digest of PVSEC-3 (Tokyo, Japan, 1987), 705 Google Scholar
3. Demichelis, F., presented at the 1994 MRS Spring Meeting, San Francisco CA, 1994) to be published.Google Scholar
4. Folsch, J., Rubel, H., Schade, H., Appl. Phys. Lett. 61, 3029 (1992)CrossRefGoogle Scholar
5. Matsuda, A., Hamaoka, T., Wolff, S., Koyama, M., Imanishi, Y., Kataoka, H., Matsumura, H., Tanaka, K., J. Appl. Phys. 60, 4025 (1986).CrossRefGoogle Scholar
6. Bullot, J. and Schmidt, P., Phys. Stat. Sol. (b), 143, 349 (1987)CrossRefGoogle Scholar
7. Shah, A., Dutta, J., Prasad, K., Wyrsch, N., Curtins, H., Finger, F.. Howling, A. and Hollenstein, Ch. in Amorphous Silicon Technology 1992. edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E. (Mater. Res. Soc. Proc. 258, Pittsburgh, PA, 1992), 15 Google Scholar
Ferreira, C.M. and Loureiro, J., J. Phys. D 17, 1175 (1984)CrossRefGoogle Scholar
8. Heintze, M. and Zedlitz, R., J. Non Cryst. Solids, 55, 164–166 (1993)Google Scholar
9. Kroll, U., Ziegler, Y., Meier, J., Keppner, H. and Shah, A., presented at the 1994 MRS Spring Meeting, San Francisco CA, 1994) to be published.Google Scholar
10. Finger, F., Kroll, U., Viret, V., Shah, A., Tang, X.M., Howling, A. and Ch. Hollenstein, J. Appl. Phys., 71, 5665 (1992)CrossRefGoogle Scholar
11. Zedlitz, R., Lotter, E. and Heintze, M., J. Non Cryst. Solids, 55, 1031 (1993)CrossRefGoogle Scholar
12. Camargo, S.S., De Oliveira, M.L., Pasa, A.A., Gatts, C. in Amorphous Silicon Technology 1992. edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E. (Mater. Res. Soc. Proc. 258, Pittsburgh, PA, 1992), 613 Google Scholar