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Silicon AD-Dimer Binding on Si(100)

Published online by Cambridge University Press:  15 February 2011

Peter J. Bedrossian ,
Arthur P. Smith  and
Hannes Jonsson
Peter J. Bedrossian
Affiliation:
Lawrence Livermore National Laboratory, L-350, Livermore CA 94551.
Arthur P. Smith
Affiliation:
Department of Chemistry, BG-10, University of Washington, Seattle WA 98195.
Hannes Jonsson
Affiliation:
Lawrence Livermore National Laboratory, L-350, Livermore CA 94551.
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Abstract

Isolated Si ad-dimers nucleate predominantly on Si(100) substrate dimer rows at room temperature. Using tunneling microscopy (STM), we find that, while ad-dimers oscillate between two mutually orthogonal orientations, the geometry with the ad-dimer bond perpendicular to the substrate's dimer bonds is the more stable. This observation confirms a prediction of ab initio calculations with a gradient correction for the energies of ad-dimers in various configurations, which differs from that of the local density approximation (LDA).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 35
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Zhang, Z. and Metiu., H. Surf. Sci. Lett. 292, L781 (1993).Google Scholar
2 Zhang, Z. and Metiu, H.. Surf. Sci. 245, 353 (1991).Google Scholar
3 Zhang, Z., Lu, Y. and Metiu, H.. Surf. Sci. Lett. 255, L543–L549 (1991).Google Scholar
4 Srivastava, D. and Garrison, B.. Phys. Rev. B 47, 4464 (1993).Google Scholar
5 Rockett, A.. Surf. Sci. 312, 201 (1994).Google Scholar
6 Murty, M.V.R., Atwater, H., Kellock, A. and J. Baglin. App. Phys. Lett. 62, 2566 (1993).Google Scholar
7 Wilby, M., Ricketts, M., Clarke, S. and Vvedensky, D.. J. Crystal Growth 111, 864 (1991).Google Scholar
8 Car, R. and Parrinello., M. Phys. Rev. Lett. 55, (1985).Google Scholar
9 Perdew, J.. in Electronic Structure of Solids ‘91 (eds. Ziesche, P. & Eschrig, H.) (Akademie, Berlin, 1991).Google Scholar
10 Becke, A.. J. Chem. Phys 98, 5648 (1993).Google Scholar
11 Lee, C., Yang, W. and R. Parr. Phys. Rev. B 37, 785 (1988).Google Scholar
12 Smith, A. et al. , J. Chem. Phys. 102, 1044 (1995).Google Scholar
13 Mo., Y.-W. Science 261, 886 (1993).Google Scholar
14 Brocks, G., Kelly, P. and R. Car. Surf. Sci. 269/270, 860–866 (1992).Google Scholar
15 Bedrossian, P.. Phys. Rev. Lett. 74, 3648 (1995).Google Scholar