Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T15:26:51.322Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicide Film Formation in the Ta/Ti/Si System by RF Induction Heating

Published online by Cambridge University Press:  31 January 2011

Joshua Pelleg ,
Shmuel Rosenberg  and
Misha Sinder
Joshua Pelleg
Affiliation:
[email protected], Ben-Gurion University of the Negev, Materials Engineering, Beer Sheva, Israel
Shmuel Rosenberg
Affiliation:
[email protected], Ben-Gurion University of the Negev, Materials Engineering, Beer Sheva, Israel
Misha Sinder
Affiliation:
[email protected], Ben-Gurion University of the Negev, Materials Engineering, Beer Sheva, Israel
Get access

Abstract

Silicidation of Ta-Ti-Si film on Si (111) and Si (100) substrates was investigated by a new radio frequency (RF) heating in order to evaluate the progress of reaction and establish whether the substrate orientation influence on the rate of reaction prevails. Substrate orientation was observed notwithstanding the high temperatures applied and the very short duration of RF. It was observed that while the reaction on Si (111) goes to completion, on Si (100) substrates under the same conditions intermediate phases remained. A qualitative analysis of the RF treatment of a conductor film on the silicon substrate is presented. It is done for the first time using the mathematical approach of the heat explosion theory. According to the analysis the specimens might experience either heating at constant temperature or by a sudden temperature increase. The relation between the parameters for the heat explosion regime is presented in simple analytical form. Measurable quantities such as sheet resistance and the magnetic field applied determine the stage of the process. The value of the resulting sheet resistance indicates whether the progress of the RF occurred by heating in the slow growth temperature regime or in the heat explosion stage where reactions of a conductor film occur within a fraction of a second.

Keywords

filmphase transformationplasma deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1230: Symposium MM – Ultrafast Processes in Materials Science , 2009 , 1230-MM06-01
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Sinder, M. Pelleg, J. Meerovich, V. and Sokolovsky, V. Materials Science and Engineering A302, 31 (2001).Google Scholar
2 Zeldovich, Ya. B., Barenblatt, G. I. Librovich, V. B. Makhviladze, G. M. Mathematical theory of combustion and explosion (Consultants Bureau, New York, 1985).Google Scholar
3 Yamauchi, Shoichi, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro, Nakamura, Hatsuo, Yokota, Yasuhiro, Akiyama, Akitsugu and Watabe, Hirokuni, Jpn. J. Appl. Phys. 32, 3237 (1993).Google Scholar
4 Gaiduk, P. I. and Larsen, Nylandsted, Appl. Phys. A53, 168 (1991).Google Scholar
5 Wittmer, M. and Tu, K. N. Physical Rev. B27. 1173 (1983).Google Scholar
6 Molnar, Gy., Peto, G. Zsoldos, E, Horvath, Z. E. and Khanh, N. Q. Appl. Surface Science 102, 159 (1996).Google Scholar
7 Pelleg, Joshua and Goldshleger, N. J. Appl. Phys. 85, 1531 (1999).Google Scholar
8 Sinder, M. and Pelleg, J. Analysis of the RF heating of the conductor film on silicon substrate on the basis of heat explosion theory, to be published, 2009 Google Scholar
9 Powder diffraction file, card 38-483, JCPDS-ICDD-International Center for Diffraction Data, Swarthmore, PA, 1991.Google Scholar