Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-20T00:08:25.836Z Has data issue: false hasContentIssue false
  • English
  • Français

A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection

Published online by Cambridge University Press:  17 March 2011

Y. Toriumi ,
M. Takahashi  and
N. Koshida
Y. Toriumi
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
M. Takahashi
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
N. Koshida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Get access

Abstract

To verify the availability of porous silicon (PS) device for application to optical switching, the photonic response of PS for carrier injection has been studied for a microcavity configuration. The observed reflectance spectral shift in the PS microcavity with increasing diode current is analyzedunder the assumption that the refractive index of nanocrystalline silicon is increased by carrier injectionand the subsequent accumulation possibly in localized states. This is consistent with the experimental results obtained from dynamic response measurements: there are fast and slow components in the refractive indexchange. It is also demonstrated that under the pulsed operation, the PS microcavity operates as a current-induced nonlinear optical switching device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F8.3.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 ((1990).Google Scholar
2. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 ((1992).Google Scholar
3. Araki, M., Koyama, H., and Koshida, N., J. Appl. Phys. 80, 4841 ((1996).Google Scholar
4. Takahashi, M., Araki, M., and Koshida, N., Jpn. J. Appl. Phys. 37, L1017 ((1998).Google Scholar
5. Matsumoto, T., Hasegawa, N., Tamaki, T., Ueda, K., Fujitani, T., Mimura, H, and Kanemitsu, Y., Jpn. J. Appl. Phys. 33, L35 (1994)Google Scholar
6. , Fryad Henari, Z., Morgenstern, Kai, Blau, Werner J., Karavanskii, Vladimir A., and Dneprovskii, Vladimir S., Appl. Phys. Lett. 67, 323 (1995)Google Scholar
7. Malý, P., Kudrna, J., Trojánek, F., and Hospodková, A., Thin Solid Films 276, 84 ((1996).Google Scholar
8. Vijayalakshmi, S., George, M. A., and Grebel, H., Appl Phys. Lett. 70, 708 ((1997).Google Scholar
9. Takahashi, M., Toriumi, Y., Matsumoto, T., Masumoto, Y., andKoshida, N., Appl. Phys. Lett 76, 1990 (2000).Google Scholar