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SiC epitaxial growth on porous SiC substrates

Published online by Cambridge University Press:  15 March 2011

G. Melnychuck ,
M. Mynbaeva ,
S. Rendakova ,
V. Dmitriev  and
S. E. Saddow
G. Melnychuck
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
M. Mynbaeva
Affiliation:
Ioffe Institute, St. Petersburg, 194021, Russia
S. Rendakova
Affiliation:
TDI, Inc., Gaithersburg, MD, 20877
V. Dmitriev
Affiliation:
Ioffe Institute, St. Petersburg, 194021, Russia TDI, Inc., Gaithersburg, MD, 20877
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
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Abstract

We report on the growth and crystal quality of CVD epitaxial layers grown on porous SiC (PSC) substrates. A layer of porous SiC was fabricated by surface anodization of commercial 4H and 6H-SiC (0001)Si face off-axis wafers. The 4H and 6H-SiC epilayers were grown on porous SiC (PSC) substrates using atmospheric pressure CVD at 1580°C and a Si to C ratio of 0.3. Results of X-ray diffraction, RHEED, SEM and AFM characterization demonstrated good surface quality of the films grown on porous material. PL data indicate a greatly improved defect structure in the epi layers grown on PSC as compared to control samples. Preliminary etch pit experiments to estimate the dislocation density indicate a three-fold reduction in defect density in the epi material grown on PSC substrates as compared to epi grown conventional substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.2.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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