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Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

Published online by Cambridge University Press:  21 February 2011

H. Lafontaine ,
D.C. Houghton ,
B. Bahierathan ,
D.D. Perovic  and
J.-M. Baribeau
H. Lafontaine
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
D.C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
B. Bahierathan
Affiliation:
Department of Metallurgy, University of Toronto, 184 College St., Toronto, M5S 3E4 Canada
D.D. Perovic
Affiliation:
Department of Metallurgy, University of Toronto, 184 College St., Toronto, M5S 3E4 Canada
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A OR6 Canada
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Abstract

Several Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 413
Copyright
Copyright © Materials Research Society 1996

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References

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