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Si Ultra Shallow Junctions Dopant Profiling with ADF-STEM
Published online by Cambridge University Press: 01 February 2011
Abstract
In this work, we show how the Z-contrast annular dark field scanning transmission electron microscopy technique can provide reliable dopant profiles in ultra shallow junctions in Si. Dopant profiles obtained with this technique are compared with those obtained by spectroscopic techniques like secondary ion mass spectroscopy and medium energy ion scattering.
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- Research Article
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- Copyright © Materials Research Society 2008
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