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Si Quantum Dot Structures and Some Aspects of Applications

Published online by Cambridge University Press:  05 March 2013

Lyudmula V. Shcherbyna  and
Tetyana V. Torchynska
Lyudmula V. Shcherbyna
Affiliation:
V. Lashkarev Institute of Semiconductor Physics at National Academy of Science, Kiev, Ukraine
Tetyana V. Torchynska
Affiliation:
ESFM – Instituto Politécnico Nacional, México D.F. 07738, México
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Keywords

Sinanostructureluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1534: Symposium 6B – Low-Dimensional Semiconductor Structures , 2013 , pp. A5 - A12
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Torchynska, T.V., “ Nanocrystals and quantum dots. Some physical aspects” in the book “Nanocrystals and quantum dots of group IV semiconductors”, Editors: Torchynska, T. V. and Vorobiev, Yu., American Scientific Publisher, 2010, 1–42.Google Scholar
Furukawa, S., and Miyasato, T., Jpn. J. Appl. Phys., Part 2 27, L2207, (1988).CrossRefGoogle Scholar
Cullis, A.G., and Canham, L. T., Nature, 335, 335 (1991).CrossRefGoogle Scholar
Lehmann, V., Gosele, U., Appl. Phys. Lett. 58, 856 (1991).CrossRefGoogle Scholar
Prokes, S.M., Appl. Phys. Lett. 62, 3244 (1993).CrossRefGoogle Scholar
Kanemitsu, Y., Okamoto, Sh., Phys. Rev. B 56, R1696 (1997).CrossRefGoogle Scholar
Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.H., Ross, F.M. et al. . Phys. Rev. B 52, 4910 (1995).CrossRefGoogle Scholar
Torchynska, T.V., Khomenkova, L.I., Korsunska, N.E., Sheinkman, M.K., Physica B. Conden. Mat. 273–274 955–958 (1999).CrossRefGoogle Scholar
Torchinskaya, T.V., Aguilar Hernandez, J., Schacht Hernandez, L., Polupan, G., Goldstein, Y., Many, A., Jedrzejewski, J., Kolobov, A., Microelect. Engineer. 66, 83–90 (2003).CrossRefGoogle Scholar
Jeon, K.A., Kim, J.H., Choi, J.B., Han, K.B., Lee, S.Y., Mater. Sci. Eng. B 23 (2003) 1017.CrossRefGoogle Scholar
Torchynska, T.V., Vivas Hernandez, A., Dybiec, M., Emirov, Y., Tarasov, I., Ostapenko, S., matsumoto, Y., phys. stat.solid.(c). 2(6), 1832–1836 (2005).CrossRefGoogle Scholar
Torchynska, T.V., Diaz Cano, A., Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B, Conden. Mat. 376–377, 367–369 (2006).CrossRefGoogle Scholar
Dybiec, M., Ostapenko, S., Torchynska, T. V., Lozada, E.V., Appl. Phys. Lett. 84(25), 5165–5167 (2004).CrossRefGoogle Scholar
Torchynska, T.V., Morales Rodriguez, M., Becerril-Espinoza, F.G., Korsunskaya, N.E., Khomenkova, L.Yu., Shcherbyna, L.V., Phys. Rev.B 65, 115313 (2002).CrossRefGoogle Scholar
Torchynska, T.V., J. Appl. Phys. 92, 4019 (2002).CrossRefGoogle Scholar
Torchynska, T., Aguilar-Hernandez, J., Diaz Cano, A.I., Contreras-Puente, G., Becerril Espinoza, F.G., Vorobiev, Yu.V., Goldstein, Y., Many, A., Jedrzejewski, J., Bulakh, B.M. and Scherbina, L.V., Physica B, Conden. Mat. 308–310, 1108–1112 (2001).CrossRefGoogle Scholar
Torchynska, T.V., Opto-electronics Review, 2, 121–130 (1998)Google Scholar
Korsunskaya, N.E., Torchinskaya, T.V., Dzhumaev, B.R., Khomenkova, L.Yu., Bulakh, B.M., Semiconductors, 31, 773 (1997).CrossRefGoogle Scholar
Kanemitsu, Y., Uto, H., Masumoto, Y., Matsumoto, T., Futagi, T., Mimura, H., Phys. Rev. B, 48, 2827 (1993).CrossRefGoogle Scholar
Qin, G. G., Liu, X. S., Ma, S. Y., Lin, J., Yao, G. Q.. Lin, X. Y., Lin, K. X., Phys. Rev. B, 55, 12876 (1997).CrossRefGoogle Scholar
Torchynska, T. V., Korsunskaya, N. E., Khomenkova, L. Yu., Dzhumaev, B. R., Prokes, S. M., Thin Solid Films, 381/1, 88 (2001).CrossRefGoogle Scholar
Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G., Delerue, C., Phys. Rev. Lett. 82, 197 (1999).CrossRefGoogle Scholar
Puzder, A., Williamson, A.J., Grossman, J. C., Galli, G., Phys. Rev. Lett. 88, 097401 (2002).CrossRefGoogle Scholar
Littau, K.A., Szajowski, P.J., Muller, A.J., Kortan, A.R., and Brus, L.E., J. Phys. Chem. 97, 1224 (1993).CrossRefGoogle Scholar
Wilcoxon, J.P., Samara, G.A. and Provencio, P.N., Phys. Rev. B 60, 2704 (1999).CrossRefGoogle Scholar
Ledoux, G., Gong, J., Huisken, F., Guillois, O. and Reynaud, C., Appl. Phys. Lett. 80, 4834 (2002).CrossRefGoogle Scholar
Torchynska, T.V., “Si and Ge quantum dot structures” in the book “Nanocrystals and quantum dots of group IV semiconductors”, Editors: Torchynska, T. V. and Vorobiev, Yu., American Scientific Publisher, 2010, 42–84.Google Scholar
Holmes, J.D., Ziegler, K.J., Doty, C., Pell, L.E., Johnston, K.P., Korgel, B.A., J. Am. Chem. Soc. 123, 3743 (2001).CrossRefGoogle Scholar
Sankaran, R.M., Holunga, D., Flagan, R.C., Giapis, K.P., Nano Lett. 5, 531 (2005).CrossRefGoogle Scholar
Tsybeskov, L., Duttagupta, S.P., Hirschman, K.D., Fauchet, P.M., Appl. Phys. Lett. 68, 2058 (1996).CrossRefGoogle Scholar
Castagna, M.E., Muscara, A., Leonardi, S., Coffa, S., Caristia, L., Tringali, C., Lorenti, S., J.Lumin. 121, 187 (2006).CrossRefGoogle Scholar
Kim, K.H., Shin, J.H., Park, H.M., Huh, Ch., Kim, T.Y., Cho, K.S., Hong, J.Ch., Sung, G.Y., Appl. Phys. Lett. 89, 191120 (2006).CrossRefGoogle Scholar
Biteen, J. S., Lewis, N. S. and Atwater, H. A., Appl. Phys. Lett. 88, 131109 (2006).CrossRefGoogle Scholar
Castagna, M.E., Coffa, S., Monaco, M., Caristia, L., Messina, A., Mangano, R., Bongiorno, C., J. Phys. E 16, 547 (2003).CrossRefGoogle Scholar
Khomenkova, L. Yu., “Si nanocrystals and quantum dots embedded in amorphous Si matrix”, in the book “Nanocrystals and quantum dots of group IV semiconductors”, Editors: Torchynska, T. V. and Vorobiev, Yu., American Scientific Publisher, 2010, 85–112.Google Scholar
Iiduka, R., Heya, A., Matsumura, H., Solar Energy Materials and Solar Cells, 48, 279 (1997).CrossRefGoogle Scholar
Meiling, H., Brockhoff, A.M., Rath, J.K., Schropp, R.E.I., J. Non-Cryst. Solids, 227–230, 1202(1998).CrossRefGoogle Scholar
Shah, A.V., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., Graf, U., Solar Energy Materials and Solar Cells, 78, 469 (2003).CrossRefGoogle Scholar
Dalal, V. L., Madhavan, A., J. Non-Cryst. Solids, 354, 2403 (2008).CrossRefGoogle Scholar
Green, M.A., Third Generation Photovoltaics: Advanced Solar Energy Conversion, Springer, 2003.Google Scholar
Conibeer, G., Green, M., Cho, E.-Ch., König, D., Cho, Y.-H., Fangsuwannarak, T., Scardera, G., Pink, E., Huang, Y., Puzzer, T., Huang, Sh., Song, D., Flynn, Ch., Park, S., Hao, X., D. Mansfield Thin Solid Films, 516, 6748 (2008)CrossRefGoogle Scholar
Yamada, Shigeru, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Yamada, Akira, and Konagai, Makoto, Proc. IEEE 35th PVSC, No. 5617097, 766 (2010).Google Scholar
Horváth, Zs.J., Basa, P., “Nanocrystal memory structures” in the book “Nanocrystals and quantum dots of group IV semiconductors”, Editors: Torchynska, T. V. and Vorobiev, Yu., American Scientific Publisher, 2010, 225–252.Google Scholar
Normand, P., Kapetanakis, E., Dimitrakis, P., Skarlatos, D., Beltsios, K., Tsoukalas, D., et al. . Nucl. Instr. and Meth. B, 216, 228 (2004).CrossRefGoogle Scholar
Antonova, I., “Electrical properties of semiconductor nanocrystals and quantum dots in dielectric matrix”, in the book “Nanocrystals and quantum dots of group IV semiconductors”, Editors: Torchynska, T. V. and Vorobiev, Yu., American Scientific Publisher, 2010, 149–187.Google Scholar
Baron, T., Gentile, P., Magnea, N., Mur, P., Appl. Phys. Lett., 79, 1175 (2001).CrossRefGoogle Scholar
van der Wiel, W.G., De Franceschi, S., Elzerman, J.M., Fujisawa, T., Tarucha, S., Kouwenhoven, L., Rev. Mod. Phys. 75, 1, (2003).CrossRefGoogle Scholar
Kikkawa, J.M., Smorchkova, I.P., Samarth, N., Awschalom, D.D., Science 277, 1284 (1997).CrossRefGoogle Scholar
Cerletti, V., Coish, W.A., Gywat, O. and Loss, D., Nanotechnol. 16, R27 (2005).CrossRefGoogle Scholar
Simmons, C.B., Thalakulam, M., Shaji, N., Klein, L.J., Qin, H., Blick, R.H., Appl. Phys. Lett. 91, 213103 (2007).CrossRefGoogle Scholar