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Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps

Published online by Cambridge University Press:  22 February 2011

T. O. Sedgwick ,
R. Kalish ,
S. R. Mader  and
S. C. Shatas
T. O. Sedgwick
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
R. Kalish
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
S. R. Mader
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598;
S. C. Shatas
Affiliation:
A. G. Associates, Palo Alto, CA 94303
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Abstract

B and As implanted Si wafers have been thermally annealed by an array of tungsten halogen lamps at 1000–1200°C for 1–10 sec. Annealing above 1100°C leaves the crystal free of extended defects in all cases as determined by TEM. An enhanced diffusion is observed above normal values characterized by a low activation energy for both As and B samples. This enhanced diffusion is transient and occurs within about one second since the RBS and SIMS dopant profiles are identical for 1 sec and a 10 sec anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 293
Copyright
Copyright © Materials Research Society 1984

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References

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