Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:28:50.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Shape Reversal of Ge/Si Domes to Pyramids Via Si-Ge Intermixing and Strain Reduction

Published online by Cambridge University Press:  10 February 2011

William L. Henstrom ,
Chuan-Pu Liu  and
J. Murray Gibson
William L. Henstrom
Affiliation:
Dept. of Physics, University of Illinois at Urbana-Champaign
Chuan-Pu Liu
Affiliation:
Dept. of Physics, University of Illinois at Urbana-Champaign
J. Murray Gibson
Affiliation:
Materials Research Division, Argonne National Laboratory
Get access

Abstract

At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work[1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 45
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Kamins, T.I., G. Medeiros-Ribeiro, Ohlberg, D.A.A., and Williams, R.S.. Appl. Phys. A 67, 727(1998).Google Scholar
[2]Floro, J.A., Chason, E., and Lee, S.R.. edited by Pang, S.W.Diagnostic Techniques for Semiconductor Materials Processing H. (Mater. Res. Soc., Pittsburgh, PA, 1996) pp. 4 9 1–6. USA.Google Scholar
[3]Hovsepiam, A., Cherns, D., and Jager, W., Inst. Phys. Conf. Ser. No. 153: Section 10, 413(1997).Google Scholar
[4]Miller, P.D., Chuan-Pu, Liu, and Gibson, J.M., submitted to Ultramicroscopy.Google Scholar
[5]Miller, P.D., Liu, C.-P., Henstrom, W.L., Gibson, J.M., Huang, Y., Zhang, P., Kamins, T.I., Basile, D. P., and Williams, R. Stanley, Appl. Phys. Lett. 75, 46(1999).Google Scholar
[6]Liu, C.-P., Miller, P.D., Henstrom, W.L. and Gibson, J.M., Presented at MRS Spring Meeting, San Francisco, 4–9 April, to be published in MRS proceeding (1999).Google Scholar
[7]Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W., and Whelan, M.J., Electron Microscopy of Thin Crystals, (Butterworths, London, 1965), p. 206.Google Scholar
[8]Ashby, M.F., and Brown, L.M.. Phil. Mag. 8, 1083(1963).Google Scholar
[9]Ashby, M.F., and Brown, L.M.. Phil. Mag. 8, 1649(1963).Google Scholar
[10]Liu, C.-P., Miller, P.D., Henstrom, W.L., and Gibson, J.M., submitted to J. Microscopy.Google Scholar
[11] Ludwig Reimer, Transmission Electron Microscopy: Physics of Image Formation and Microanalysis, 3rd ed. (Springer-Verlag, Berlin, 1993) pp. 138, 204–205.Google Scholar
[12]Liu, C.-P., Henstrom, W.L., and Gibson, J.M., Presented at MRS Fall Meeting, Boston, 28 November-3 December, to be published in MRS proceeding (1999).Google Scholar
[13]Henstrom, W.L., Liu, C.-P., Gibson, J.M., Kamins, T.I., and Williams, R.S., in preparation.Google Scholar