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Shallow Junctions for Sub-100 Nm Cmos Technology

Published online by Cambridge University Press:  21 March 2011

Veerle Meyssen ,
Peter Stolk ,
Jeroen van Zijl ,
Jurgen van Berkum ,
Willem van de Wijgert ,
Richard Lindsay ,
Charles Dachs ,
Giovanni Mannino  and
Nick Cowern
Veerle Meyssen
Affiliation:
Philips Research Laboratories, Eindhoven, THE NETHERLANDS
Peter Stolk
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, BELGIUM
Jeroen van Zijl
Affiliation:
Philips Research Laboratories, Eindhoven, THE NETHERLANDS
Jurgen van Berkum
Affiliation:
Philips CFT; Eindhoven, THE NETHERLANDS
Willem van de Wijgert
Affiliation:
Philips CFT; Eindhoven, THE NETHERLANDS
Richard Lindsay
Affiliation:
IMEC; Kapeldreef 75, B-3001 Leuven, BELGIUM
Charles Dachs
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, BELGIUM
Giovanni Mannino
Affiliation:
CNR-IMETEM, Catania, ITALY
Nick Cowern
Affiliation:
Philips Research Laboratories, Eindhoven, THE NETHERLANDS Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, BELGIUM
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Abstract

This paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J3.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Dachs, C.J.J., Verheijen, M.A., Kaiser, M., Stolk, P.A., and Ponomarev, Y.V., Proc. ESSDERC-2000, pp. 360–363 (2000).Google Scholar
[2] Mentink, S.A.M. et al., 12th European Congress on Electron Microscopy (2000).Google Scholar
[3] Stolk, P.A. Gossmann, H.-J., Eaglesham, D.J., Jacobson, D.C., Rafferty, C.S., Gilmer, G.H., Jaraiz, M., Poate, J.M., Luftman, H.S., and Haynes, T.E., J. Appl. Phys. 81, 6031 (1997).Google Scholar
[4] Michel, A.E., Rausch, W., Ronsheim, P.A. and Kastl, R.H., Appl. Phys. Lett. 50, 416 (1987).Google Scholar
[5] Agarwal, A., Fiory, A.T., Gossmann, H.-J., Rafferty, C.S. and Frisella, P., Mat. Sci. Semi. Proc. 1, 237 (1998).Google Scholar
[6] Saito, S., Shishiguchi, S., Hamada, K. and Hayashi, T., Mat. Chem. and Phys. 54, 49 (1998).Google Scholar
[7] Mehrotra, M., Hu, J.C., Jain, A., Shiau, W., Hattangady, S., Reddy, V., Aur, S., and Rodder, M., Tech. Digest IEDM, 419 (1999).Google Scholar
[8] Downey, D.F., Osburn, C.M, Marcus, S.D., Solid State Tech., 71 (Dec. 1997).Google Scholar
[9] Al-Bayati, A., Tandon, S., Mayur, A., Foad, M., Wagner, D., Murto, R., Sing, D., Ferguson, C., Larson, L., Proceedings of the Ion Implantation Technology conference (2000).Google Scholar
[10] Huang, T.H., Kinoshita, H., and Kwong, D.L., Appl. Phys. Lett. 65, 1829 (1994).Google Scholar
[11] Mannino, G., Stolk, P.A., Cowern, N.E.B., Boer, W.B. de, Dirks, A.G., Roozeboom, F., Berkum, J.G.M. van, Woerlee, P.H., and Toan, N.N., Appl. Phys. Lett. 78, 889 (2001).Google Scholar
[12] Stolk, P.A. et al., Mat. Res. Soc. Symp. Proc. Vol. 610 (2000).Google Scholar
[13] Robertson, L.S., Gable, K.A. and co-workers.Google Scholar