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Shallow Contact Formation of Gadolinium Silicide

Published online by Cambridge University Press:  22 February 2011

I. C. Cheng ,
S. S. Lau ,
R. D. Thompson  and
K. N. Tu
I. C. Cheng
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California at San Diego, La Jolla, California 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer SciencesUniversity of California at San Diego, La Jolla, California 92093
R. D. Thompson
Affiliation:
IBM, T. J. Watson Research CenterYorktown Heights, New York 10598
K. N. Tu
Affiliation:
IBM, T. J. Watson Research CenterYorktown Heights, New York 10598
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Abstract

Gadolinium silicide with its attractive features of low formation temperature of about 350°C and low Schottky barrier height on n-type single-crystal silicon substrates (ϕnB1∼O.4ev,ϕpB ∼ 0.7ev) was chosen for studying the feasibility of forming shallow uniform contacts. Samples with various compositions prepared by both bilayer evaporation with a configuration of Si(α)/Gd/Si(xtl) and coevaporation with a Si−Gd /Si(xtl)structure were used for studying the contact formation as a function of composition and heat treatment. We found that shallow contact formation can be achieved provided that the following conditions are met: (a) for bilayer evaporation, the atomic ratio of Si(α)/Gd ≥ 2 should be maintained, (b) for coevaporation, the Si to Gd atomic ratio between 1.7 and 2.0 is desired. The bilayer deposition scheme appears to be a more convenient technique to use in practice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 39
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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