Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:47:56.326Z Has data issue: false hasContentIssue false
  • English
  • Français

Shallow and Deep Level Defects in GaN

Published online by Cambridge University Press:  21 February 2011

W. Götz ,
N.M. Johnson ,
D.P. Bour ,
C. Chen ,
H. Liu ,
C. Kuo  and
W. Imler
W. Götz
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
N.M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
D.P. Bour
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
C. Chen
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
H. Liu
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
C. Kuo
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
W. Imler
Affiliation:
Hewlett Packard Co., San Jose, California 95931, USA
Get access

Abstract

Shallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 443
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Akasaki, I., Amano, H., Koide, N., Kotaki, M., Manabe, K., Physica B 185, 428, (1993)Google Scholar
2 Nakamura, S., Senoh, M., Iwasa, N., and Nagayama, S., Jpn. J. Appl. Phys. 34, L797 (1995)Google Scholar
3 Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994)Google Scholar
4 Nakamura, S., Mukai, T., and Senoh, M., Jpn. J. Appl. Phys. 31, 195, (1992)Google Scholar
5 Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989)Google Scholar
6 Asif Khan, M., Olson, D.T., Kuznia, J.N., Carlos, W.E., and Freitas, J.A. Jr., J. Appl. Phys. 74, 5901 (1993)Google Scholar
7 Hacke, P., Maekawa, A., Koide, N., Hiramatsu, K., Sawaki, N., Jpn. J. Appl. Phys. 33, 6443 (1994)Google Scholar
8 Molnar, R.J. and Moustakas, T.D., Bull. Am. Phys. Soc. 38, 445 (1993)Google Scholar
9 Nakamura, S., Mukai, T., Senoh, M., and Iwasa, I., Jpn. J. Appl. Phys. 31, L139 (1992)Google Scholar
10 Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992)Google Scholar
11 Götz, W., Johnson, N.M., Walker, J., Bour, D.P., Amano, H., and Akasaki, I., Appl. Phys. Lett. 67, 2666 (1995)Google Scholar
12 Götz, W., Johnson, N.M., Walker, J., Bour, D.P., and Street, R.A., to be publishedGoogle Scholar
13 Brandt, M.S., Ager III, J.W., Götz, W., Johnson, N.M., Harris, J.S., Molnar, R.J., and Moustakas, T.D., Phys. Rev. B 49, 14758 (1994)Google Scholar
14 Ilegems, M., Dingle, R., and Logan, R.A., J. Appl. Phys. 43, 3797 (1972)Google Scholar
15 Pankove, J.I. and Hutchby, J.A., J. Appl. Phys. 47, 5387 (1976)Google Scholar
16 Monemar, B. and Lagerstedt, O., J. Appl. Phys. 50, 6480 (1979)Google Scholar
17 Götz, W., Johnson, N.M., Street, R.A., Amano, H., Akasaki, I., Liu, H., Kuo, C., and Imler, W., presented at the Topical Workshop on III-V Nitrides, Nagoya, Japan (1995)Google Scholar
18 Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980)Google Scholar
19 Suski, T., Perlin, P., Teisseyre, H., Leszcynski, M., Grzegory, I., Jun, J., Bockowski, M., and Porowski, S., Appl. Phys. Lett. 67, 2188 (1995)Google Scholar
20 Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A. Jr., Khan, M. Asif., Olson, D.T., Kuznia, J.N., and Wickenden, D.K., Phys. Rev. B 51, 13326 (1995)Google Scholar
21 Baur, J., Kaufmann, U., Kunzer, M., Schneider, J., Amano, H., Akasaki, I., Detchprohm, T., and Hiramatsu, K., Appl. Phys. Lett. 67, 1140 (1995)Google Scholar
22 Götz, W., Johnson, N.M., Amano, H., and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994)Google Scholar
23 Hacke, P., Detchprohm, T., Hiramatsu, K., and Sawaki, N., J. Appl. Phys. 76, 304 (1994)Google Scholar
24 Lee, W.I., Huang, T.C., Guo, J.D., and Feng, M.S., Appl. Phys. Lett. 67, 1721 (1995)Google Scholar
25 Götz, W., Johnson, N.M., Street, R.A., Amano, H., and Akasaki, I., Mat. Res. Soc. Symp. Proc. Vol. 378, 491 (1995)Google Scholar
26 Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B 10, 1237 (1992)Google Scholar
27 Götz, W., Romano, L.T., Neugebauer, J., Johnson, N.M., Cheng, C., Liu, H., to be publishedGoogle Scholar
28 Lee, T.F. and McGill, T.C., J. Appl. Phys. 46, 373 (1975)Google Scholar
29 Molnar, R.J. and Moustakas, T.D., Bull. Am. Phys. Soc. 38, 445 (1993)Google Scholar
30 Akasaki, I., Amano, H., Kito, M., and Hiramatsu, K., J. Lumin. 48 & 49, 666 (1991)Google Scholar
31 Tanaka, T., Watanabe, A., Amano, H., Kobayashi, Y., Akasaki, I., Yamazaki, S., and Koike, M., Appl. Phys. Lett. 65, 593 (1994)Google Scholar
32 Johnson, N.M., Mater. Res. Soc. Symp. Proc. 69, 75 (1986)Google Scholar
33 Götz, W., Johnson, N.M., Street, R.A., Amano, H., and Akasaki, I., Appl. Phys. Lett. 66, 1340,(1995)Google Scholar
34 Neugebauer, J. and Van de Walle, C.G., Phys. Rev. B 50, 8067 (1994)Google Scholar