Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:34:18.465Z Has data issue: false hasContentIssue false
  • English
  • Français

Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Masanori Otobe  and
Shunri Oda
Masanori Otobe
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan.
Shunri Oda
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan.
Get access

Abstract

We have investigated nucleation and growth mechanism of nanocrystalline silicon (nc-Si) based on the experimental observation of plan-view transmission electron microscopy. Nanocrystalline Si has been prepared by hydrogen radical annealing of hydrogenated amorphous silicon (a-Si:H) layer, which is deposited on hydrogen radical treated a-Si:H buffer layer. Nanocrystallization depends critically upon hydrogen radical annealing time and the thickness ofa-Si:H layer. Hydrogen radicals play important roles in both nucleation and growth processes in a different way. Growth of nc-Si can be explained by “hydrogen diffusion model”, in which hydrogen radicals diffusing through a-Si:H layer to interface cause nanocrystallization. Our results imply that nuclei for nc-Si are generated at the interface between a-Si:H and under layer when treated by hydrogen radicals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 519
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Furukawa, S. and Miyasato, T., Phys. Rev. B, 38, 5726 (1988).Google Scholar
2. Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Nakagiri, T., Appl. Phys. Lett. 56, 2379(1990).Google Scholar
3. Fortunate, E., Martins, R., Ferreira, I., Santos, M., Marcano, A. and Guimaraes, L., J. Non-Cryst. Solids 115, 120 (1989).Google Scholar
4. Tsu, R., Ye, Q.- Y. and Nicollian, E. H., SPIE 1361, 232 (1990).Google Scholar
5. Otobe, M. and Oda, S., Jpn. J. Appl. Phys. 31, 1948 (1992).Google Scholar
6. Asano, A., Appl. Phys. Lett. 56, 533 (1990).Google Scholar
7. Nomoto, K., Urano, Y., Guizot, J. L., Ganguly, G. and Matsuda, A., Jpn. J. Appl. Phys. 29, L1372 (1990).Google Scholar
8. Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl. Phys. Lett. 59, 1096 (1991).Google Scholar
9. Otobe, M. and Oda, S., Jpn. J. Appl. Phys. 31, L1388 (1992).Google Scholar
10. Otobe, M. and Oda, S., Jpn. J. Appl. Phys. 31, L1443 (1992).Google Scholar
11. Matsuda, A. and Ganguly, G., private communication.Google Scholar
12. Nakamura, M.. Ohno, T., Miyata, K. and Konishi, N., J. Appl. Phys. 65, 3061 (1989).Google Scholar
13. Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys. 30, L679 (1991).Google Scholar