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Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H

Published online by Cambridge University Press:  01 January 1993

P.A. Stolk ,
A.J.M. Berntsen ,
F.W. Saris  and
W.F. Van Der Weg
P.A. Stolk
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407,1098 SJ Amsterdam, The Netherlands.
A.J.M. Berntsen
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
F.W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407,1098 SJ Amsterdam, The Netherlands.
W.F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
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Abstract

This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps after 1 MeV Si+ implantation to doses exceeding 1014/cm2. A comparison with relaxed a-Si suggests that damage generation in a-Si:H merely arises from displacements in the silicon network. Annealing of ion-damaged a-Si:H at 200-500 °C recovers the carrier lifetime to 60-100 ps as a result of hydrogen passivation of electrical defects. However, Raman spectroscopy shows that hydrogen does not significantly enhance long-range network relaxations during annealing. This implies that thermal treatments of ion-implanted a-Si:H can not fully recover the as-deposited state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 127
Copyright
Copyright © Materials Research Society 1993

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