Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:13:32.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Semi-Insulating Behavior of Undoped Inp

Published online by Cambridge University Press:  22 February 2011

K. Kainosho ,
O. Oda ,
G. Hirt  and
G. MÜller
K. Kainosho
Affiliation:
Nikko Kyodo Co., Ltd, Electronic Materials and Components Laboratories 3–17–35, Niizo-Minami, Toda, Saitama, 335, Japan
O. Oda
Affiliation:
Nikko Kyodo Co., Ltd, Electronic Materials and Components Laboratories 3–17–35, Niizo-Minami, Toda, Saitama, 335, Japan
G. Hirt
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften 6 Martensstrale 7, 91058 Erlangen, Germany
G. MÜller
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften 6 Martensstrale 7, 91058 Erlangen, Germany
Get access

Abstract

Recently, it was found that semi-insulating behavior of undoped InP can be realized by high pressure annealing of undoped high purity InP. In the present work, studies related with the achievement of the semi-insulating state are reviewed. Purification of raw materials, effect of native defects, effect of high pressure annealing, contamination of Fe are discussed. The semi-insulation mechanism is explained by the Shockley diagram. The semi-insulating state is supposed to be achieved by the annihilation of shallow donors (presumably phosphorus vacancies) and the compensation of the residual donors with a small amount of Fe deep acceptor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 101
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kainosho, K., Shimakura, H., Kanazawa, T., Inoue, T. and Oda, O., Proc. 16th International Symp. on GaAs and Related Compounds, (Inst. Phys. Conf. Ser. 106, 1990), pp25.Google Scholar
[2] Holmes, D. E., Wilson, R. G. and Yu, P. W., J. Appl. Phys. 52, 3396 (1981).Google Scholar
[3] Miner, C., Knight, D. G., Zorzi, J. M., Streater, R. W., Puetz, N. and Ikisawa, M., Proceedings for DRIP VI, 1993 Santander, to be published.Google Scholar
[4] Klein, P. B., Henry, R. L., Kennedy, T. A. and Wilsey, N. D., “Defects in Semiconductors”, edited by Bardeleben, H. J., Mater. Sci. Forum 10–12, 1259(1986).CrossRefGoogle Scholar
[5] Hofmann, D., Müller, G., and StreckfuB, N., Appl. Phys. A48, 315 (1989).Google Scholar
[6] Hirano, R. and Kanazawa, T., J. Cryst. Growth 106, 531 (1990).Google Scholar
[7] Kainosho, K., Shimakura, H., Yamamoto, H. and Oda, O., Appl. Phys. Lett. 59,932 (1991).CrossRefGoogle Scholar
[8] Oda, O., Katagiri, K., Shinohara, K., Katsura, S., Takahashi, Y., Kainosho, K., Kohiro, K. and Hirano, R., “Semiconductor and Semimetals”, edited by Willardson, R. K. and Beer, A. C. (Academic, New York, 1990), Vol. 31, pp93.Google Scholar
[9] Amano, T., Kondo, S. and Nagai, H., Ext. Abstracts (The 34th Spring Meeting) The Jpn. Soc. of Appl. Phys. and Related Socs. pp126.Google Scholar
[10] Inoue, T., Kainosho, K., Hirano, R., Shimakura, H., Kanazawa, T. and Oda, O., J. Appl. Phys. 67,7165 (1990).Google Scholar
[11] Morioka, M., Tada, K. and Akai, S., Ann. Rev. Mater. Sci. 17, 75 (1987).CrossRefGoogle Scholar
[12] Jacob, G., Coquille, R. and Toudic, Y., Proc. 6th Conf. on Semi-Insulating 1II-V Materials, Toronto, 149(1990).Google Scholar
[13] Inoue, T., Shimakura, H., Kainosho, K., Hirano, R. and Oda, O., J. Electrochem. Soc. 137, 1283 (1990).Google Scholar
[14] Bardeleben, H. J. von, Stievenard, D., Kainosho, K. and Oda, O., J. Appl. Phys. 70,7392 (1991).Google Scholar
[15] Müller, G., Hofmann, D., Kipfer, P. and Mosel, F., Proc. 2nd International Conf. on InP and Related Materials, Denver, 21 (1990).Google Scholar
[16] Hirt, G., Hofmann, D., Mosel, F., Schdfer, N. and Müller, G., J. Electronic Materials 20, 1062 (1991).Google Scholar
[17] Schafer, N., private communication.Google Scholar
[18] Oda, O., Yamamoto, H., Seiwa, M., Kano, G., Mori, M., Shimakura, H. and Oyake, M., Semicond. Sci. Technol. 7, A215 (1992).Google Scholar
[19] Hirt, G., Bomhorst, S., Friedrich, J., Schafer, N. and Müller, G., Proc. 5th International Conf. on InP and Related Materials, Paris, 313 (1993).Google Scholar
[20] Hirt, G., Wolf, D. and Müller, G., J. Appl. Phys. 74, 5538 (1993).CrossRefGoogle Scholar
[21] Wazer, J. R. van, “Phosphorus and its compounds”, vol. 1, (Interscience Publishers, New York, 1966), pp165.Google Scholar
[21] Makita, Y., Yamada, A., Yoshinaga, H., lida, T., Niki, S., Uekusa, S., Matsumori, T., Kainosho, K. and Oda, O., Proc. 4th International Conf. on InP and Related Materials, Newport, 626 (1992).Google Scholar
[22] Yoshinaga, H., Makita, Y., Yamada, A., lida, T., Niki, S., Matsumori, T., Kainosho, K. and Oda, O.. Proc. 5th International Conf. on InP and Related Materials, Paris, 317 (1993).Google Scholar
[23] Razeghi, M., Maurel, Ph., Defour, M., Omnes, F., Neu, G., and Kozacki, A., Appl. Phys. Lett. 52,117 (1988).Google Scholar
[24] Hirt, G. and Mèiller, G., to be publishedGoogle Scholar
[25] Vechten, J. A. van, J. Appl. Phys. 53, 7082 (1982).Google Scholar
[26] Tuck, B. and Jay, P. R., J. Phys. D 11, 1413 (1978).Google Scholar
[27] Schockley, W., “Electrons and Holes in Semiconductors”, D. van Nostrand Co., Inc., Princeton (1950).Google Scholar
[28] Martin, S. and Jacob, G., Acta Electronica 25, 123 (1983).Google Scholar
[29] Kubota, E., Ohmori, Y. and Sugii, K., J. Appl. Phys., 55, 3779(1984).CrossRefGoogle Scholar
[30] Kubota, E. and Katsui, A., Jpn. J. Appl. Phys., 24, L344(1985).Google Scholar