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Semiconductors With Tetrahedral Anions As Potential Thermoelectric Materials

Published online by Cambridge University Press:  01 February 2011

Thomas P. Braun ,
Christopher B. Hoffman  and
Francis J. DiSalvo
Thomas P. Braun
Affiliation:
Dept. of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14850, U.S.A.
Christopher B. Hoffman
Affiliation:
Dept. of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14850, U.S.A.
Francis J. DiSalvo
Affiliation:
Dept. of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14850, U.S.A.
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Abstract

In order to find the next generation thermoelectric (TE) material, we are focussing on the parameter Nv, the degeneracy of the band extrema in semiconductors near the Fermi energy. We attempt to synthesize ‘multivalley’ semiconductors by incorporating tetrahedral anions to introduce structural complexity while maintaining high crystallographic symmetry.

The synthesis and crystal structures of two new compounds that partially fulfill our requirements for potential TE materials are reported. Pb3(PS4)Br3 is monoclinic, space group P21/m with a=9.1531(1)Å, b=10.9508(3)Å, c=12.7953(1)Å and β=111.024(2)°. Pb3(PS4)I1.75Te0.625 crystallizes in the space group R 3 with a=9.4876(4)Å, c=46.189(3)Å. Both structures are built from alternating layers of lead halide and the thiophosphate ion (PS4)3-.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 626: Symposium Z – Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications , 2000 , Z8.2
Copyright
Copyright © Materials Research Society 2000

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References

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