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Semiconductor Resonant Tunneling Device Physics and Applications

Published online by Cambridge University Press:  28 February 2011

Mark A. Reed ,
Alan C. Seabaugh ,
Yung-Chung Kao ,
John N. Randall ,
William R. Frensley  and
James H. Luscombe
Mark A. Reed
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
Alan C. Seabaugh
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
Yung-Chung Kao
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
John N. Randall
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
William R. Frensley
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
James H. Luscombe
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, P. O. Box 655936, M/S 154, Dallas, TX 75265, U.S.A
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Abstract

A discussion of resonant tunneling physics in both diode and transistor heterojunction structures is presented. It is evident the In(GaAI)As/InP system is significantly superior for this application. We also present results on resonant tunneling in lower dimensional systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 309
Copyright
Copyright © Materials Research Society 1990

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References

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